Abstract: A method for producing an optoelectronic device having nitride-based microLEDs includes providing an assembly having at least one growth substrate and a nitride structure, where the nitride structure has a semipolar nitride layer that includes an active stack and crystallites extending from facets of the growth substrate with a crystalline orientation {111} to the first face of the semipolar nitride layer and providing an integrated control circuit featuring electric connection pads. The assembly is placed on the integrated control circuit, the growth substrate and the crystallites are removed, and trenches are formed in the stack so as to delimit a plurality of islets, each islet being configured to form a microLED.

Abstract: A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among gallium, aluminium or indium, the method comprises the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves which extend in a first direction, one of the two opposite facets exhibiting a crystal orientation; etching a plurality of parallel slices which extend in a second direction that has undergone a rotation with respect to the first direction of the grooves in such a way as to obtain individual facets exhibiting a crystal orientation; epitaxial growth of the material from the individual facets.

Abstract: A method is provided for obtaining a semi-polar nitride layer obtained from a gallium and nitrogen based material on an upper surface of a crystalline substrate of cubic symmetry, including: etching parallel grooves from the upper surface having two opposed inclined facets, one having a crystalline orientation <111>; forming a mask above the upper surface such that the facets having <111> orientation are not masked; and then forming the layer by epitaxial growth from the non-masked facets, including: a first epitaxial growth phase to form a seed in parallel grooves; interrupting the first phase when the seed has an inclined facet having a crystalline orientation 0001 and an upper facet having a crystalline semi-polar orientation 1011; a surface treatment step including modifying an upper portion of the seed to include silicon; and a second epitaxial growth phase from the inclined facet, continuing until coalescence of seeds of adjacent parallel grooves.

Abstract: A process allowing at least one semipolar layer of nitride to be obtained, which layer is obtained from a least one among gallium, indium and aluminum on a top surface of a single-crystal layer based on silicon, wherein the process comprises the following steps: etching, from the top surface of the single-crystal layer, a plurality of parallel grooves comprising at least two opposite inclined facets, at least one of two opposite facets having a crystal orientation; masking the top surface of the single-crystal layer such that the facets having a crystal orientation are not masked; and epitaxial growth of the semipolar layer of nitride from the not masked facets; wherein the etching is carried out on a stack comprising the single-crystal layer and at least one stop layer that is surmounted by the single-crystal layer and wherein the etching etches the single-crystal layer selectively with respect to the stop layer so that the etching stops on contact with the stop layer.

Abstract: The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a semi-polar starting substrate including a plurality of grooves periodically spaced apart, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation, the method comprising the phases consisting in: forming (2) III-nitride crystals on the first inclined flanks of the grooves, the growth parameters of the III-nitride crystals being adapted to favor lateral growth of said crystals such as to induce overlapping between adjacent III-nitride crystals, and continuing growth until coalescence of the III-nitride crystals to form a layer of coalesced III-nitride crystals; forming (3) a two-dimensional III-nitride layer on the layer of coalesced III-nitride crystals.

Abstract: A subject matter of the invention relates to a method for obtaining at least one semi-polar layer (480) of nitride (N) on an upper surface of a crystalline layer (300), the method comprising the steps of: etching parallel grooves (320) starting from the upper surface of the crystalline substrate (300), each groove (320) comprising at least one facet (310) having a crystalline orientation {111}; forming a mask (331) such that the facets (311) opposite to said facets (310) having a crystalline orientation {111} are masked and that said facets (310) having a crystalline orientation {111} are not masked; at least one first epitaxial growth phase, carried out from said non-masked facets (310) in such a way as to form a seed (440); interruption of the first epitaxial growth phase when said seed (440) has an inclined facet (442) having a crystalline orientation (0001) and an upper facet (441) having a crystalline orientation (1011); a surface treatment step comprising a modification of an upper portion of the see

Abstract: A process allowing at least one semipolar layer of nitride to be obtained, which layer is obtained from a least one among gallium, indium and aluminum on a top surface of a single-crystal layer based on silicon, wherein the process comprises the following steps: etching, from the top surface of the single-crystal layer, a plurality of parallel grooves comprising at least two opposite inclined facets, at least one of two opposite facets having a crystal orientation; masking the top surface of the single-crystal layer such that the facets having a crystal orientation are not masked; and epitaxial growth of the semipolar layer of nitride from the not masked facets; wherein the etching is carried out on a stack comprising the single-crystal layer and at least one stop layer that is surmounted by the single-crystal layer and wherein the etching etches the single-crystal layer selectively with respect to the stop layer so that the etching stops on contact with the stop layer.

Abstract: A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among gallium, aluminium or indium, the method comprises the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves which extend in a first direction, one of the two opposite facets exhibiting a crystal orientation; etching a plurality of parallel slices which extend in a second direction that has undergone a rotation with respect to the first direction of the grooves in such a way as to obtain individual facets exhibiting a crystal orientation; epitaxial growth of the material from the individual facets.

Abstract: The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer from a semi-polar starting substrate including a plurality of grooves periodically spaced apart, each groove including a first inclined flank of crystallographic orientation C (0001) and a second inclined flank of different crystallographic orientation, the method comprising the phases consisting in: forming (2) III-nitride crystals on the first inclined flanks of the grooves, the growth parameters of the III-nitride crystals being adapted to favour lateral growth of said crystals such as to induce overlapping between adjacent III-nitride crystals, and continuing growth until coalescence of the III-nitride crystals to form a layer of coalesced III-nitride crystals; forming (3) a two-dimensional III-nitride layer on the layer of coalesced III-nitride crystals.