Abstract: Microbolometers with regionally thinned microbridges are produced by depositing a thin film (0.6 ?m) of silicon nitride on a silicon substrate, forming microbridges on the substrate, etching the thin film to define windows in a pixel area, thinning the windows, releasing the silicon nitride, depositing a conductive YBaCuO film on the bridges, depositing a conductive film (Au) on the YBaCuO film, and removing selected areas of the YBaCuO and conductive films.

Abstract: An infrared imager for detecting infrared (IR) radiation of a scene in a field of view (FOV) of an optical system and converting the IR into a visible image wherein the imager consists of an array of uncooled microbolometers in a focal plane of the optical system and a array of light emitting diode (LED) or liquid crystal display (LCD) elements. The IR radiation collected by the microbolometer produces a change in an electrical output applied to electronic circuitry connected to the array of LEDs or LCDs. The electronic circuitry controls the intensity of a LED element or the reflectance of an LCD element. As a result, the imager converts the infrared radiation from the scene into visible light. The light reflected from the LCD or produced by LEDs in an array constitutes the scene image.

Abstract: An infrared imager for detecting infrared (IR) radiation of a scene in a field of view (FOV) of an optical system and converting the IR into a visible image wherein the imager consists of an array of uncooled microbolometers in a focal plane of the optical system and a array of light emitting diode (LED) or liquid crystal display (LCD) elements. The IR radiation collected by the microbolometer produces a change in an electrical output applied to electronic circuitry connected to the array of LED s or LCDs. The electronic circuitry controls the intensity of a LED element or the reflectance of an LCD element. As a result, the imager converts the infrared radiation from the scene into visible light.

Abstract: Microstructure for bolometer for high infrared sensitivity and detectivity having a corrugated air bridge microstructure which provides a large area, low infrared reflection and large infrared absorption so as to increase the sensitivity and detectivity.

Abstract: Methods of forming a field emission device with self-aligned gate structure, comprising a substrate on which at least one wedge or tip electrode and one accelerating or gate electrode are provided. The only photolithographic step involved is to pattern an integrated gate electrode opening on high quality, thermally grown oxide which can withstand a strong electric field. The formation of the emissive electrode by etching starts at the edge of the integrated gate electrode opening defined by the oxide material layer. As a result, the distance between the emissive electrode and the gate electrode is minimum. Simple wet chemical etching may be used to form the emissive electrode.

Abstract: Methods for wavelength determination of a monochromatic beam are described. The methods involve a detector unit containing at least one variable filter and at least one pair of photo detectors. The detectors have photo sensitive regions with their areas varying with the position in one direction. The wavelength for maximum transmission of the variable filter varies in the same direction. By comparing the photo current values from the two detectors, wavelength of the incident beam is determined. Methods to construct wavelength discrimination junction photo detector pair and double barrier photo detector pair are also given.

Abstract: Methods for wavelength determination of a monochromatic beam are described. The methods involve a detector unit containing at least one variable filter and at least one pair of photo detectors. The detectors have photo sensitive regions with their areas varying with the position in one direction. The wavelength for maximum transmission of the variable filter varies in the same direction. By comparing the photo current values from the two detectors, wavelength of the incident beam is determined. Methods to construct wavelength discrimination junction photo detector pair and double barrier photo detector pair are also given.