Abstract: A system for actuating closures of a vehicle includes drive units and latches. The drive units may couple to one of the closures and may be used to control movement of the closure relative to another closure. Using the latches, the closures may be coupled together and the same drive units can be used to control movement of both closures together. The controlled movement of the closures may be automated by using a controller and one or more motors.

Abstract: Devices and methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, an RF device can include a silicon die such as an SOI die including a first side and a second side. The silicon die can further include a plurality of vias, with each via configured to provide an electrical connection between the first side and the second side of the silicon die. The RF device can further include at least one RF flip chip mounted on the first side of the silicon die. The silicon die can include, for example, an RF circuit such as a switch circuit, and the RF flip chip can include, for example, a filter such as a surface acoustic wave (SAW) filter.

Abstract: A neck trial (170) is disclosed. The neck trial has a body (182) and a neck (186). The body has an exterior surface. The neck extends away from the body along a neck axis (190). At least one first line (194) is provided on the exterior surface, which extends in a first direction parallel to an inferior-superior axis of a patient when in use. At least one second line (196) is provided on the exterior surface, which extends in a second direction parallel to a medial-lateral axis of the patient in use. The number of first lines, or the position of the first line or lines relative to the second line or lines, is indicative of an amount of offset in the medial-lateral direction caused by the neck trial. The number of second lines, or the position of the second line or lines relative to the first line or lines, is indicative of an amount of leg-length in the inferior-superior direction caused by the neck trial. A kit of parts, a trial assembly and a method of trialling a joint of a patient are also disclosed.

Abstract: Devices and methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, an RF device can include a silicon die such as an SOI die including a first side and a second side. The silicon die can further include a plurality of vias, with each via configured to provide an electrical connection between the first side and the second side of the silicon die. The RF device can further include at least one RF flip chip mounted on the first side of the silicon die. The silicon die can include, for example, an RF circuit such as a switch circuit, and the RF flip chip can include, for example, a filter such as a surface acoustic wave (SAW) filter.

Abstract: Methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, a method of manufacturing a radio-frequency device can include providing a semiconductor die including a radio-frequency circuit, a first side and a second side, and a plurality of vias, each via configured to provide an electrical connection between the first side and the second side of the semiconductor die. The method can further include mounting a filter device on the first side of the semiconductor die, the filter device in communication with the radio-frequency circuit, the radio-frequency circuit implemented in a layer on the first side of the semiconductor die and at least some of the vias coupled with the radio-frequency circuit to support an electrical connection between the radio-frequency circuit and mounting features on the second side of the semiconductor die.

Abstract: According to some implementations, a radio-frequency (RF) device includes a communication interface coupled to a serial bus. The RF device also includes a monitoring component coupled to the communication interface, the monitoring component configured to monitor the serial bus for first data transmitted to a first device coupled to the serial bus and configure the RF device based on the first data.

Abstract: Techniques and apparatus for ion source devices with minimized post-column volumes are described. In one embodiment, for example, an apparatus may include at least one memory, and logic coupled to the at least one memory. The logic may be configured to receive analytical information from at least one analytical instrument, and generate at least one record in a distributed ledger having a transaction associated with at least a portion of the analytical information. Other embodiments are described.

Abstract: Methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, a method of manufacturing a radio-frequency device can include providing a semiconductor die including a radio-frequency circuit, a first side and a second side, and a plurality of vias, each via configured to provide an electrical connection between the first side and the second side of the semiconductor die. The method can further include mounting a filter device on the first side of the semiconductor die, the filter device in communication with the radio-frequency circuit, the radio-frequency circuit implemented in a layer on the first side of the semiconductor die and at least some of the vias coupled with the radio-frequency circuit to support an electrical connection between the radio-frequency circuit and mounting features on the second side of the semiconductor die.

Abstract: Devices and methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, an RF device can include a silicon die such as an SOI die including a first side and a second side. The silicon die can further include a plurality of vias, with each via configured to provide an electrical connection between the first side and the second side of the silicon die. The RF device can further include at least one RF flip chip mounted on the first side of the silicon die. The silicon die can include, for example, an RF circuit such as a switch circuit, and the RF flip chip can include, for example, a filter such as a surface acoustic wave (SAW) filter.

Abstract: According to some implementations, a radio-frequency (RF) device includes a communication interface coupled to a serial bus. The RF device also includes a monitoring component coupled to the communication interface, the monitoring component configured to monitor the serial bus for first data transmitted to a first device coupled to the serial bus and configure the RF device based on the first data.

Abstract: Systems, devices and methods related to multi-band power amplifier. In some embodiments, a power amplifier module includes a power amplifier having an output stage and configured to receive a signal. The power amplifier module also includes a first programmable harmonic termination circuit in electrical communication with the output stage of the power amplifier. The first programmable harmonic termination circuit includes a first plurality of capacitors and a first plurality of switches, with at least one of the first plurality of capacitors being in electrical communication with at least one of the first plurality of switches. The power amplifier module further includes a controller configured to modify a configuration of the first plurality of switches of the first programmable harmonic termination circuit based at least in part on a second harmonic frequency of the signal.

Abstract: According to some implementations, a radio-frequency (RF) device includes a communication interface coupled to a serial bus. The RF device also includes a monitoring component coupled to the communication interface, the monitoring component configured to monitor the serial bus for first data transmitted to a first device coupled to the serial bus and configure the RF device based on the first data.

Abstract: Devices and methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, an RF device can include a silicon die such as an SOI die including a first side and a second side. The silicon die can further include a plurality of vias, with each via configured to provide an electrical connection between the first side and the second side of the silicon die. The RF device can further include at least one RF flip chip mounted on the first side of the silicon die. The silicon die can include, for example, an RF circuit such as a switch circuit, and the RF flip chip can include, for example, a filter such as a surface acoustic wave (SAW) filter.

Abstract: Systems, devices and methods related to multi-band power amplifier. In some embodiments, a power amplifier module includes a power amplifier having an output stage and configured to receive a signal. The power amplifier module also includes a first programmable harmonic termination circuit in electrical communication with the output stage of the power amplifier. The first programmable harmonic termination circuit includes a first plurality of capacitors and a first plurality of switches, with at least one of the first plurality of capacitors being in electrical communication with at least one of the first plurality of switches. The power amplifier module further includes a controller configured to modify a configuration of the first plurality of switches of the first programmable harmonic termination circuit based at least in part on a second harmonic frequency of the signal.

Abstract: Techniques and apparatus for are described. In one embodiment, for example, an apparatus may include at least one memory, and logic coupled to the at least one memory. The logic may be configured to perform an analytical service on a primary analytical device, receive acceptance of the analytical service, and generate an analytical services package for the analytical service, the analytical services package configured to facilitate performance of the analytical service on a client analytical device. Other embodiments are described.

Abstract: Devices and methods related to radio-frequency (RF) filters on silicon-on-insulator (SOI) substrate. In some embodiments, an RF device can include a silicon die such as an SOI die including a first side and a second side. The silicon die can further include a plurality of vias, with each via configured to provide an electrical connection between the first side and the second side of the silicon die. The RF device can further include at least one RF flip chip mounted on the first side of the silicon die. The silicon die can include, for example, an RF circuit such as a switch circuit, and the RF flip chip can include, for example, a filter such as a surface acoustic wave (SAW) filter.

Abstract: A switch control circuit includes a positive voltage bias node, a voltage-regulated positive supply rail coupled to the positive voltage bias node, a charge pump coupled to a charge pump supply node, and a current source positive supply rail coupled to the charge pump supply node and configured to supply the charge pump.

Abstract: Techniques and apparatus for ion source devices with minimized post-column volumes are described. In one embodiment, for example, an apparatus may include at least one memory, and logic coupled to the at least one memory. The logic may be configured to receive analytical information from at least one analytical instrument, and generate at least one record in a distributed ledger having a transaction associated with at least a portion of the analytical information. Other embodiments are described.

Abstract: Systems, devices and methods related to multi-band power amplifier. In some embodiments, a power amplifier module includes a power amplifier having an output stage and configured to receive a signal. The power amplifier module also includes a first programmable harmonic termination circuit in electrical communication with the output stage of the power amplifier. The first programmable harmonic termination circuit includes a first plurality of capacitors and a first plurality of switches, with at least one of the first plurality of capacitors being in electrical communication with at least one of the first plurality of switches. The power amplifier module further includes a controller configured to modify a configuration of the first plurality of switches of the first programmable harmonic termination circuit based at least in part on a second harmonic frequency of the signal.

Abstract: Aspects of this disclosure relate to systems and methods of performing dynamic impedance tuning. Certain aspects may be performed by or include a dynamic impedance matching network. The dynamic impedance matching network can determine a desired output power for a power amplifier, true power information for the power amplifier, and an output power delivered to a load by the power amplifier. In addition, the dynamic impedance matching network can determine whether the output power satisfies the true power information. Responsive to this determination, the dynamic impedance matching network may modify a load line impedance for the power amplifier using an impedance tuning network.