Patents by Inventor Phillip Brock
Phillip Brock has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8470516Abstract: A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.Type: GrantFiled: August 18, 2009Date of Patent: June 25, 2013Assignee: International Business Machines CorporationInventors: Robert D. Allen, Luisa Bozano, Phillip Brock, Qinghuang Lin, Alshakim Nelson, Ratnam Sooriyakumaran
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Patent number: 8440387Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.Type: GrantFiled: January 14, 2010Date of Patent: May 14, 2013Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip Brock, Daniel P. Sanders, Linda K. Sundberg
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Patent number: 7951524Abstract: Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.Type: GrantFiled: January 31, 2008Date of Patent: May 31, 2011Assignees: International Business Machines Corporation, JSR Micro Inc.Inventors: Robert Allen, Phillip Brock, Shiro Kusumoto, Yukio Nishimura, Daniel P. Sanders, Mark Steven Slezak, Ratnam Sooriyakumaran, Linda K. Sundberg, Hoa Trung, Gregory M. Wallraff
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Publication number: 20110045387Abstract: A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.Type: ApplicationFiled: August 18, 2009Publication date: February 24, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert D. Allen, Luisa Bozano, Phillip Brock, Qinghuang Lin, Alshakim Nelson, Ratnam Sooriyakumaran
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Patent number: 7867689Abstract: A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.Type: GrantFiled: May 18, 2007Date of Patent: January 11, 2011Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Publication number: 20100168337Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.Type: ApplicationFiled: January 14, 2010Publication date: July 1, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert D. Allen, Phillip Brock, Daniel P. Sanders, Linda K. Sundberg
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Patent number: 7678537Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.Type: GrantFiled: March 31, 2008Date of Patent: March 16, 2010Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip Brock, Daniel P. Sanders, Linda K. Sundberg
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Publication number: 20080311506Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.Type: ApplicationFiled: March 31, 2008Publication date: December 18, 2008Inventors: Robert D. Allen, Phillip Brock, Daniel P. Sanders, Linda K. Sundberg
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Publication number: 20080311530Abstract: A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.Type: ApplicationFiled: June 15, 2007Publication date: December 18, 2008Inventors: Robert D. Allen, Phillip Brock, Daniel P. Sanders, Linda K. Sundberg
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Publication number: 20080286467Abstract: A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.Type: ApplicationFiled: May 18, 2007Publication date: November 20, 2008Inventors: Robert D. Allen, Phillip Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Publication number: 20080193879Abstract: Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.Type: ApplicationFiled: January 31, 2008Publication date: August 14, 2008Inventors: Robert Allen, Phillip Brock, Shiro Kusumoto, Yukio Nishimura, Daniel P. Sanders, Mark Steven Slezak, Ratnam Sooriyakumaran, Linda K. Sundberg, Hoa Truong, Gregory M. Wallraff
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Publication number: 20080026330Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 ?/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.Type: ApplicationFiled: October 5, 2007Publication date: January 31, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert Allen, Phillip Brock, Dario Gil, William Hinsberg, Carl Larson, Linda Sundberg, Gregory Wallraff
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Publication number: 20070259274Abstract: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.Type: ApplicationFiled: June 20, 2007Publication date: November 8, 2007Applicant: International Business Machines CorporationInventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, David Medeiros, Ratnam Sooriyakumaran
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Publication number: 20070254237Abstract: Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 ?/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.Type: ApplicationFiled: April 28, 2006Publication date: November 1, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: ROBERT ALLEN, PHILLIP BROCK, SEAN BURNS, DARIO GOLDFARB, DAVID MEDEIROS, DIRK PFEIFFER, MATT PINNOW, RATNAM SOORIYAKUMARAN, LINDA SUNDBERG
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Publication number: 20070254235Abstract: Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.Type: ApplicationFiled: April 28, 2006Publication date: November 1, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: ROBERT ALLEN, PHILLIP BROCK, CARL LARSON, DANIEL SANDERS, RATNAM SOORIYAKUMARAN, LINDA SUNDBERG, HOA TRUONG, GREGORY WALLRAFF
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Publication number: 20070254236Abstract: A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.Type: ApplicationFiled: April 28, 2006Publication date: November 1, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: ROBERT ALLEN, PHILLIP BROCK, CARL LARSON, RATNAM SOORIYAKUMARAN, LINDA SUNDBERG, HOA TRUONG
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Publication number: 20070231734Abstract: A photoresist composition including a polymer, a photo acid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.Type: ApplicationFiled: September 29, 2005Publication date: October 4, 2007Inventors: Robert Allen, Phillip Brock, Richard DiPietro, Ratnam Sooriyakumaran, Hoa Truong
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Publication number: 20070117040Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.Type: ApplicationFiled: November 21, 2005Publication date: May 24, 2007Applicant: International Business Machines CorporationInventors: Phillip Brock, Jennifer Cha, Dario Gil, Carl Larson, Linda Sundberg, Gregory Wallraff
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Publication number: 20070026339Abstract: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.Type: ApplicationFiled: May 29, 2003Publication date: February 1, 2007Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, David Medeiros, Ratnam Sooriyakumaran
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Patent number: 7135595Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: GrantFiled: January 12, 2006Date of Patent: November 14, 2006Assignee: International Business Machines CorporationInventors: Robert David Allen, Gregory Breyta, Phillip Brock, Richard A. DiPietro, Debra Fenzel-Alexander, Carl Larson, David R. Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa D. Truong, Gregory M. Wallraff