Abstract: A computer structure comprises a first silicon substrate in which is formed computer circuitry and analogue circuitry for supporting communications. A second silicon substrate comprises a plurality of distributed capacitance units, and is connected to the first substrate via a set of connectors arranged extending depth-wise of the structure. The second substrate has an outer surface on which are arranged a supply voltage connector terminal and a ground connector terminal for connecting the computer structure to a supply voltage for the analogue circuitry and to ground respectively. One or more of the distributed capacitance units of the second silicon substrate is connected between the supply voltage connector and the ground connector terminal via one or more of the set of connectors to provide a decoupling capacitor for the analogue circuitry.

Abstract: A method for testing a stacked integrated circuit device comprising a first die and a second die, the method comprising: sending from testing logic of the first die, first testing control signals to first testing apparatus on the first die; in response to the first testing control signals, the first testing apparatus running a first one or more tests for testing functional logic or memory of the first die; sending from the testing logic of the first die, second testing control signals to the second die via through silicon vias formed in a substrate of the first die; and in dependence upon the second testing control signals from the first die, running a second one or more tests for testing the stacked integrated circuit device.

Abstract: The first logic wafer is attached to a supporting wafer, which adds sufficient depth to this bonded structure such that the first logic wafer may be thinned during the manufacturing process. The first logic wafer is thinned such that the through silicon vias may be etched in the substrate of the first logic wafer so as to provide adequate connectivity to a second logic wafer, which is bonded to the first logic wafer. The second logic wafer adds sufficient depth to this bonded structure to allow the supporting wafer to then be thinned to enable through silicon vias to be added to the supporting wafer so as to provide appropriate connectivity for the entire stacked structure. The thinned supporting wafer is retained in the finished stacked wafer structure and may comprise additional components (e.g. capacitors) supporting the operation of the processing circuitry in the logic wafers.