Patents by Inventor Phillip J. Brock

Phillip J. Brock has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150189743
    Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.
    Type: Application
    Filed: March 11, 2015
    Publication date: July 2, 2015
    Inventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Ratnam Sooriyakumaran
  • Patent number: 9057951
    Abstract: Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: June 16, 2015
    Assignee: International Business Machines Corporation
    Inventors: Robert D. Allen, Phillip J. Brock, Richard A. DiPietro, Hoa D. Truong
  • Patent number: 9006373
    Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.
    Type: Grant
    Filed: January 16, 2013
    Date of Patent: April 14, 2015
    Assignee: International Business Machines Corporation
    Inventors: Phillip J. Brock, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Jitendra S. Rathore, Ratnam Sooriyakumaran
  • Patent number: 8946371
    Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.
    Type: Grant
    Filed: January 16, 2013
    Date of Patent: February 3, 2015
    Assignee: International Business Machines Corporation
    Inventors: Phillip J. Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Jitendra S. Rathore, Ratnam Sooriyakumaran
  • Patent number: 8802347
    Abstract: Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: August 12, 2014
    Assignee: International Business Machines Corporation
    Inventors: Robert D. Allen, Phillip J. Brock, Kuang-Jung Chen, Alexander Friz, Wu-Song Huang, Ratnam Sooriyakumaran, Sally A. Swanson, Hoa D. Truong
  • Patent number: 7944055
    Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.
    Type: Grant
    Filed: May 3, 2010
    Date of Patent: May 17, 2011
    Assignee: International Business Machines Corporation
    Inventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
  • Publication number: 20110111345
    Abstract: Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
    Type: Application
    Filed: November 6, 2009
    Publication date: May 12, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert D. Allen, Phillip J. Brock, Kuang-Jung Chen, Alexander Friz, Wu-Song Huang, Ratnam Sooriyakumaran, Sally A. Swanson, Hoa D. Truong
  • Publication number: 20110053083
    Abstract: Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.
    Type: Application
    Filed: August 26, 2009
    Publication date: March 3, 2011
    Applicant: International Business Machines Corporation
    Inventors: Robert D. Allen, Phillip J. Brock, Richard A. DiPietro, Hoa D. Truong
  • Publication number: 20100207276
    Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.
    Type: Application
    Filed: May 3, 2010
    Publication date: August 19, 2010
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
  • Patent number: 7709370
    Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.
    Type: Grant
    Filed: September 20, 2007
    Date of Patent: May 4, 2010
    Assignee: International Business Machines Corporation
    Inventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
  • Publication number: 20090081418
    Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.
    Type: Application
    Filed: September 20, 2007
    Publication date: March 26, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
  • Patent number: 7209324
    Abstract: The invention relates generally to the bonding of one or more sliders in styrene and butadiene polymers. More particularly, the invention relates to planarized slider assemblies formed by using debondable solid encapsulants comprised of styrene and butadiene polymers. The invention also relates to methods that use such encapsulants in conjunction with resists to produce magnetic head sliders having patterned air-bearing surfaces.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: April 24, 2007
    Assignee: Hitachi Global Storage Netherlands, B.V.
    Inventors: Phillip J. Brock, Michael W. Chaw, Dan J. Dawson, Craig J. Hawker, James L. Hedrick, Teddie P. Magbitang, Dennis R. McKean, Robert D. Miller, Richard I. Palmisano, Willi Volksen
  • Patent number: 7064929
    Abstract: The invention relates generally to the bonding of one or more sliders in styrene and acrylate polymers. More particularly, the invention relates to planarized slider assemblies formed by using debondable solid encapsulants comprised of styrene and acrylate polymers. The invention also relates to methods that use such encapsulants in conjunction with resists to produce magnetic head sliders having patterned air-bearing surfaces.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: June 20, 2006
    Assignee: Hitachi Global Storage Netherlands B.V.
    Inventors: Dennis R. McKean, Robert D. Miller, Teddie P. Magbitang, James L. Hedrick, Craig J. Hawker, Willi Volksen, Phillip J. Brock, Dan J. Dawson, Michael W. Chaw, Richard I. Palmisano
  • Publication number: 20040264050
    Abstract: The invention relates generally to the bonding of one or more sliders in styrene and butadiene polymers. More particularly, the invention relates to planarized slider assemblies formed by using debondable solid encapsulants comprised of styrene and butadiene polymers. The invention also relates to methods that use such encapsulants in conjunction with resists to produce magnetic head sliders having patterned air-bearing surfaces.
    Type: Application
    Filed: June 30, 2003
    Publication date: December 30, 2004
    Inventors: Phillip J. Brock, Michael W. Chaw, Dan J. Dawson, Craig J. Hawker, James L. Hedrick, Teddie P. Magbitang, Dennis R. McKean, Robert D. Miller, Richard I. Palmisano, Willi Volksen
  • Publication number: 20040265531
    Abstract: A slider assembly is provided comprising a plurality of sliders bonded by a debondable solid encapsulant. The solid encapsulant is comprised of a silicon-based polymer. Each slider has a surface that is free from the encapsulant. The encapsulant-free surfaces are coplanar to each other. Also provided are methods for forming the assembly and methods for patterning a slider surface using the encapsulant.
    Type: Application
    Filed: June 30, 2003
    Publication date: December 30, 2004
    Inventors: Dennis R. McKean, Robert D. Miller, Willi Volksen, James L. Hedrick, Craig J. Hawker, Phillip J. Brock, Dan J. Dawson, Teddie P. Magbitang, Michael W. Chaw, Richard I. Palmisano
  • Publication number: 20040265545
    Abstract: The invention relates generally to the bonding of one or more sliders in styrene and acrylate polymers. More particularly, the invention relates to planarized slider assemblies formed by using debondable solid encapsulants comprised of styrene and acrylate polymers. The invention also relates to methods that use such encapsulants in conjunction with resists to produce magnetic head sliders having patterned air-bearing surfaces.
    Type: Application
    Filed: June 30, 2003
    Publication date: December 30, 2004
    Inventors: Dennis R. McKean, Robert D. Miller, Teddie P. Magbitang, James L. Hedrick, Craig J. Hawker, Willi Volksen, Phillip J. Brock, Dan J. Dawson, Michael W. Chaw, Richard I. Palmisano
  • Publication number: 20040121399
    Abstract: A series of photoactivatible surface bound linker molecules, which can be used to fabricate biomolecular arrays, is described. Specifically, a composition which includes a solid substrate; an organic linking group having one terminal end portion bound to the solid substrate and at least one other terminal end portion containing an alcohol or carbonyl functionality; and an acid labile protecting group selected from acetals and ketals bound to the alcohol or carbonyl functionality. A composition which comprises a solid substrate; an organic linking group having one terminal end portion bound to the solid substrate and at least one other terminal end portion containing an aldehyde group is also described. The present invention further provides a composition which includes a solid substrate; and at least one of a photoacid generator or a sensitizer bound to the solid substrate.
    Type: Application
    Filed: December 20, 2002
    Publication date: June 24, 2004
    Applicant: International Business Machines Corporation
    Inventors: Phillip J. Brock, Richard A. Dipietro, Nicolette S. Fender, Robert D. Miller, Sally A. Swanson, Gregory M. Wallraff
  • Patent number: 6677419
    Abstract: A scaleable and high-yielding method of preparing copolymers that is useful as a component of a radiation sensitive resin composition is provided. The method includes the step of reacting at least one monomer A which is an unsaturated alicyclic monomer and forms a polymer main chain by dissociation of the unsaturated bond, and at least one unsaturated monomer B, which also forms a polymer chain by dissociation of an unsaturated bond, wherein less than two electron-withdrawing groups are directly appended to said unsaturation, and where said monomer B is other than the unsaturated alicyclic monomer and forms a polymer main chain, in the presence of a free radical initiator. The reacting step is carried out in a stoichiometric excess of monomer A as compared to monomer B. By carrying out the reacting step in an excess of monomer A as compared to monomer B, the resultant copolymer will have a greater molar concentration of monomer A than is obtainable using other methods.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: January 13, 2004
    Assignees: International Business Machines Corporation, JSR Corporation
    Inventors: Phillip J. Brock, Eiichi Kobayashi, Isao Nishimura, Yukio Nishimura, Thomas I. Wallow, Masafumi Yamamoto
  • Patent number: 6074800
    Abstract: Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate.
    Type: Grant
    Filed: April 23, 1998
    Date of Patent: June 13, 2000
    Assignee: International Business Machines Corporation
    Inventors: Gregory Breyta, Phillip J. Brock, Daniel J. Dawson, Ronald A. DellaGuardia, Charlotte R. DeWan, Andrew R. Eckert, Hiroshi Ito, Premlatha Jagannathan, Leo L. Linehan, Kathleen H. Martinek, Wayne M. Moreau, Randolph J. Smith
  • Patent number: 5391464
    Abstract: The present invention relates to thioxanthone sensitizers for radiation sensitive polyimide compositions for use in manufacturing integrated circuits such as chips, thin film packaging and printed circuit boards.
    Type: Grant
    Filed: December 28, 1993
    Date of Patent: February 21, 1995
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Phillip J. Brock, Daniel J. Dawson, Jeffrey D. Gelorme