Abstract: A method for forming a semiconductor device is disclosed in which a metal oxide gate dielectric layer is formed over a substrate. A gate electrode is then formed over the metal oxide layer thereby exposing a portion of the metal oxide layer. The exposed portion of the metal oxide gate dielectric layer is then chemically reduced to a metal or a metal hydride. The metal or metal hydride is then removed with a conventional wet etch or wet/dry etch combination. The metal oxide layer may include a metal element such as zirconium, tantalum, hafnium, titanium, or lanthanum and may further include an additional element such as silicon or nitrogen. Reducing the metal oxide layer may includes annealing the metal oxide gate dielectric layer in an ambient with an oxygen partial pressure that is less than a critical limit for oxygen desorption at a given temperature.