Abstract: Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 ?/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.

Abstract: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

Abstract: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

Abstract: A dissolution modification agent suitable for use in a photoresist composition including a polymer, a photoacid generator and casting solvent. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

Abstract: A photoresist composition including a polymer, a photoacid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

Abstract: An encapsulant fluid is provided comprising a mixture of a diene-containing compound and a dienophilic compound. At least one of the diene-containing and the dienophilic compounds is protected so that the compounds do not substantially react with each other at room temperature. The diene-containing and the dienophilic compounds undergo a reversible Diels-Alder polymerization reaction at a polymerization temperature above room temperature to form a solid debondable polymeric encapsulant. Also provided are methods for forming slider assemblies and methods for patterning a slider surface using the encapsulant.

Abstract: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 ?/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.

Abstract: A process for fabricating sliders where the sliders are held in place during processing by a solid matrix material is described. A thin coating of a release-layer material is applied on the sliders before encapsulation in the matrix material. The release-layer material is polyvinyl alcohol and more preferably high molecular weight polyvinyl alcohol which is highly hydrolyzed. Use of the release-layer of the invention maintains the process resistance while providing the advantage of allowing easier removal of the matrix material after it is no longer needed. The release-layer can be applied to encapsulant materials including epoxies, acrylates, polyimides, silsesquioxanes and others. After the selected fabrication process such as the formation of air-bearing features an appropriate solvent is applied to soften the polyvinyl alcohol film and allow clean debonding of the sliders.

Abstract: A process for fabricating sliders where the sliders are held in place during processing by a solid matrix material is described. A thin coating of a release-layer material is applied on the sliders before encapsulation in the matrix material. The release-layer material is polyvinyl alcohol and more preferably high molecular weight polyvinyl alcohol which is highly hydrolyzed. Use of the release-layer of the invention maintains the process resistance while providing the advantage of allowing easier removal of the matrix material after it is no longer needed. The release-layer can be applied to encapsulant materials including epoxies, acrylates, polyimides, silsesquioxanes and others. After the selected fabrication process such as the formation of air-bearing features an appropriate solvent is applied to soften the polyvinyl alcohol film and allow clean debonding of the sliders.

Abstract: A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.

Abstract: Copolymers prepared by radical polymerization of a fluorine-containing aromatic monomer and an acrylate-based comonomer that may or may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: Copolymers prepared by radical polymerization of a substituted norbornene monomer and a fluoromethacrylic acid, fluoromethacrylonitrile, or fluoromethacrylate comonomer are provided. The polymers are useful in lithographic phtoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: Novel norbornene fluoroacrylate copolymers are provided. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: Copolymers prepared by radical polymerization of a fluorine-containing aromatic monomer and an acrylate-based comonomer that may or may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: Novel norbornene fluoroacrylate copolymers are provided. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: Improved resolution photoresist compositions which are capable of high resolution lithographic performance using 193 nm imaging radiation (and possibly also with other imaging radiation) are obtained by use of imaging copolymers which are improvements over known alternating copolymer-based photoresists. The copolymers are characterized by the presence of an alkyl-functionalized cyclic olefin third monomeric unit which enhances the resolution of the photoresist. The performance of the compositions may be further enhanced by the use of bulky acid-labile protecting groups on the imaging copolymer.