Abstract: A method for defect diagnosis of semiconductor chip. The method comprises the steps of (a) identifying M design structures and N physical characteristics of the circuit design, wherein M and N are positive integers, wherein each design structure of the M design structures is testable as to pass or fail, and wherein each physical characteristic of the N physical characteristics is present in at least one design structure of the M design structures; (b) for each design structure of the M design structures of the circuit design, determining a fail rate and determining whether the fail rate is high or low; and (c) if every design structure of the M design structures in which a physical characteristic of the N physical characteristics is present has a high fail rate, then flagging the physical characteristic as being likely to contain at least a defect.

Abstract: A method is disclosed for designing scan chains in an integrated circuit chip with specific parameter sensitivities to identify fabrication process defects causing test fails and chip yield loss. The composition of scan paths in the integrated circuit chip is biased to allow them to also function as on-product process monitors. The method adds grouping constraints that bias scan chains to have common latch cell usage where possible, and also biases cell routing to constrain scan chain routing to given restricted metal layers for interconnects. The method assembles a list of latch design parameters which are sensitive to process variation or integrity, and formulates a plan for scan chain design which determines the number and the length of scan chains. A model is formulated of scan chain design based upon current state of yield and process integrity, wherein certain latch designs having dominant sensitivities are chosen for specific ones of the scan chains on the chip.

Abstract: A circuit and a method for monitoring defects in an integrated circuit chip. The circuit including a defect monitor portion and a sense element portion, the defect monitor portion either coupled to inputs of sense elements arranged in a chain or coupled between sense elements and forming portions of the chain.

Abstract: A method of diagnosing semiconductor device functional testing failures by combining deterministic and functional testing to create a new test pattern based on functional failure by determining the location of the type of error in the failing circuit. This is accomplished by identifying the failing vector during the functional test, observing the states of the failed device by unloading the values of the latches from the LSSD scan chain before the failing vector, generating a LOAD from the unloaded states of the latches, applying the generated LOAD as the first event of a newly created independent LSSD deterministic pattern, applying the primary inputs and Clocks that produced the failure to a correctly operating device, unloading the output of the correctly operating device to generate a deterministic LSSD pattern; and applying the generated deterministic LSSD pattern to the failing device to diagnose the failure using existing LSSD deterministic tools.

Abstract: A method and system for defect evaluation using IDDQ voltage linearity provides improved IDDQ testing for determining whether manufacturing defects in a VLSI device are likely to cause functional faults. IDDQ data is collected at multiple power plane voltages (VDDs) for a test vector at which a fault is activated. The IDDQ vs. VDD is then examined and a range of VDDs over which the characteristic IDDQs are non-linear with respect to VDD is determined. Peaks in the first derivative of the IDDQ vs. VDD curve indicate a particular VDD at which the onset of non-linearity in the IDDQ occurs. The VDD point below which the curve is non-linear indicates the relative resistance of a fault with respect to the driving point resistance of the node at which the fault is located. The relative resistance is directly determinative of additional circuit delay cause by the fault and/or whether the fault will cause a logic level transmission failure.

Abstract: A testing device for slowly bleeding charge away from a primary node in a dynamic logic circuit. A properly functioning keeper device in the dynamic logic circuit will maintain the primary node in a precharged state even in the face of this bleeding device. If the logic circuit output flips after the bleeder device begins bleeding charge, a defective keeper device is thereby identified.