Abstract: A method includes placing an imaging device in contact with a sample, irradiating the sample via an illuminator such that radiation scatters off of the structure, and providing the scattered radiation to a detector to generate a digital video signal. A processor then performs various operations including subtracting a sum of a black state value and a user-defined black level clamping value from the digital video signal to create subtracted image data, substituting negative values in the subtracted image data with a reference value to create modified image data, and amplifying the modified image data by a user-defined gain to create contrast enhanced image data.

Abstract: An imager is provided for viewing subcutaneous structures. In an embodiment of the invention, the imager includes a camera configured to generate a video frame, and an adaptive nonlinear processor. The adaptive nonlinear processor is configured to adjust a signal of the video frame below a first threshold to a maximum dark level and to adjust the signal of the video frame above a second threshold to a maximum light level. The imager further includes a display, configured to display the processed video frame.

Abstract: A spectral radiometer system, measures incoming light intensity and spectral distribution in different wavelength-bands. An additional data storage device allows recording of the measured data. The inclusive sensor system yields very high sensitivity to incoming light. Furthermore, outstanding linearity of the detector response over several orders of magnitude of incoming light is achieved. Additional benefits are ultra low power consumption and minimum size. The sensor system can be used in remote solar radiation monitoring applications like mobile solar power units as well as in long-term environmental monitoring systems where high precision and low power consumption is a necessity.

Abstract: A spectral radiometer system, measures incoming light intensity and spectral distribution in different wavelength-bands. An additional data storage device allows recording of the measured data. The inclusive sensor system yields very high sensitivity to incoming light. Furthermore, outstanding linearity of the detector response over several orders of magnitude of incoming light is achieved. Additional benefits are ultra low power consumption and minimum size. The sensor system can be used in remote solar radiation monitoring applications like mobile solar power units as well as in long-term environmental monitoring systems where high precision and low power consumption is a necessity.

Abstract: A dot-junction photovoltaic cell using high absorption semi-conductors increases photovoltaic conversion performance of direct band gap semi-conductors by utilizing dot-junction cell geometry. This geometry is applied to highly absorbing materials, including In.sub.x-1 Ga.sub.x As. The photovoltaic cell configured to be separated into a thin active region and a thick, inactive substrate, which serves as a mechanical support.

Abstract: A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Abstract: A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.

Abstract: A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate.

Abstract: Low angle V-grooves are provided in the target surfaces of optoelectronic or photovoltaic devices such as solar cells and photodetectors. The low angle V-grooves increase the efficiency of the devices by promoting total internal reflection of light reflected from the target surface at the interface of the coverglass and the external environment.