Patents by Inventor Phillip R. Atkins

Phillip R. Atkins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250237496
    Abstract: Methods and systems for performing spectroscopic reflectometry based measurements of deep, large pitch semiconductor structures at high throughput are presented herein. A multi-step regression algorithm employs a non-periodic electromagnetic (EM) solver, i.e., an EM solver that does not rely on a Fourier based analysis. The multi-step regression algorithm utilizes both incoherent and coherent reflections resulting in faster and more accurate estimates of parameters of interest, including the depth of deep trench or deep hole structures. The coherent sum of reflection coefficients captures height differences among sub-structures of a structure under measurement, whereas an incoherent sum of reflection coefficients largely ignores the height differences.
    Type: Application
    Filed: December 11, 2024
    Publication date: July 24, 2025
    Inventors: Kevin Peterlinz, Jinchuan Shi, Phillip R. Atkins, Shankar Krishnan, Giulio Baldi
  • Patent number: 10732515
    Abstract: Methods and systems for performing spectroscopic measurements of asymmetric features of semiconductor structures are presented herein. In one aspect, measurements are performed at two or more azimuth angles to ensure sensitivity to an arbitrarily oriented asymmetric feature. Spectra associated with one or more off-diagonal Mueller matrix elements sensitive to asymmetry are integrated over wavelength to determine one or more spectral response metrics. In some embodiments, the integration is performed over one or more wavelength sub-regions selected to increase signal to noise ratio. Values of parameters characterizing an asymmetric feature are determined based on the spectral response metrics and critical dimension parameters measured by traditional spectral matching based techniques.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: August 4, 2020
    Assignee: KLA-Tencor Corporation
    Inventors: Phillip R. Atkins, Qi Dai, Liequan Lee
  • Publication number: 20190094711
    Abstract: Methods and systems for performing spectroscopic measurements of asymmetric features of semiconductor structures are presented herein. In one aspect, measurements are performed at two or more azimuth angles to ensure sensitivity to an arbitrarily oriented asymmetric feature. Spectra associated with one or more off-diagonal Mueller matrix elements sensitive to asymmetry are integrated over wavelength to determine one or more spectral response metrics. In some embodiments, the integration is performed over one or more wavelength sub-regions selected to increase signal to noise ratio. Values of parameters characterizing an asymmetric feature are determined based on the spectral response metrics and critical dimension parameters measured by traditional spectral matching based techniques.
    Type: Application
    Filed: September 21, 2018
    Publication date: March 28, 2019
    Inventors: Phillip R. Atkins, Qi Dai, Liequan Lee