Abstract: A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C60) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate.

Abstract: A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C60) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate.

Abstract: The invention provides a test system and method using E-Beam techniques to characterize LSI photodiode arrays in both their electrical and optical properties.

Abstract: A method of preparing a mercury cadmium telluride substrate with a cadmium elluride surface of less than 200 .ANG. to yield a surface exhibiting improved quality and smaller variation in the x-valve of a Hg.sub.1-x Cd.sub.x Te substrate for passivation and processing of the CdTe processed surface. The method comprises the steps of etching said Hg.sub.1-x Cd.sub.x Te substrate with a bromine methanol or bromine-DMF etch, quenching the substrate in methanol or DMF until the bromine is removed and rinsing in acetone and methanol to remove soluble residuals and drying immediately, coating said substrate with CdTe layer of about 1000 .ANG., polishing the processed CdTe layer by a contactless polishing means using a polishing solution of 50% ethylene glycol and 50% mixture of 2% bromine and 98% methanol wherein said CdTe layer is polished down to generally less than 200 .ANG.