Abstract: A semiconductor component including an integrated capacitor structure having at least two groups of at least partly electrically conductive planes and which is patterned in such a way that in at least each group of planes at least one plane has a plurality of strip elements, first strip elements including a first polarity of the capacitor structure and second strip elements including a second polarity of the capacitor structure, the first strip elements together with second strip elements being at least partly interlinked in one another and strip elements of the same polarity at least partly overlapping in at least two planes, the first group of planes being electrically conductively connected by way of vertical connections (vias) to strip elements of the same polarity of the second group of planes, the strip elements of the same polarity of the second group of planes being interconnected with lateral connecting elements.

Abstract: A semiconductor component including an integrated capacitor structure having at least two groups of at least partly electrically conductive planes and which is patterned in such a way that in at least each group of planes at least one plane has a plurality of strip elements, first strip elements including a first polarity of the capacitor structure and second strip elements including a second polarity of the capacitor structure, the first strip elements together with second strip elements being at least partly interlinked in one another and strip elements of the same polarity at least partly overlapping in at least two planes, the first group of planes being electrically conductively connected by way of vertical connections (vias) to strip elements of the same polarity of the second group of planes, the strip elements of the same polarity of the second group of planes being interconnected with lateral connecting elements.