Patents by Inventor Phillip Skahan

Phillip Skahan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH POWER GALLIUM AND NITROGEN CONTAINING LASER DIODE DEVICES WITH A MODULATION DEVICE
    Publication number: 20250015558
    Abstract: According to the present invention, techniques for high power gallium and nitrogen containing laser diode devices are provided. Such high-power devices include straight lasers, tapered lasers, distributed feedback lasers, distributed Bragg reflector laser devices, and power amplifier devices configured with improved mode quality, each of which can be modulated using a modulator device.
    Type: Application
    Filed: September 20, 2024
    Publication date: January 9, 2025
    Applicant: KYOCERA SLD Laser, Inc.
    Inventors: Philip Chan, Phillip Skahan, James W. Raring, Nicholas J. Pfister
  • MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING COUPLED WAVEGUIDE DEVICES
    Publication number: 20240413614
    Abstract: The present disclosure provides optical devices and methods for forming the optical devices. In some embodiments, the optical devices include active and passive regions. The active regions may include gallium and nitrogen containing epitaxial material, and the passive regions may include waveguide structures. The active and passive regions may be arranged on a carrier wafer in an end-to-end configuration. In other embodiments, the optical devices include laser devices or gain regions and dielectric waveguides. The laser devices or gain regions may include gallium and nitrogen containing epitaxial material.
    Type: Application
    Filed: June 7, 2023
    Publication date: December 12, 2024
    Applicant: KYOCERA SLD Laser, Inc.
    Inventors: Phillip Skahan, Christian Zollner
  • HIGH POWER GALLIUM AND NITROGEN CONTAINING LASER DIODE DEVICES WITH IMPROVED MODE QUALITY
    Publication number: 20240380187
    Abstract: According to the present invention, techniques for high power gallium and nitrogen containing laser diode devices are provided. Such high power devices include straight lasers, tapered lasers, distributed feedback lasers, distributed Bragg reflector laser devices, and master oscillator power amplifier devices, among others configured with improved mode quality.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 14, 2024
    Applicant: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Thiago P. Melo, Ryan C. White, Philip Chan, Phillip Skahan
  • Facet on a gallium and nitrogen containing laser diode
    Patent number: 11742631
    Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
    Type: Grant
    Filed: September 16, 2021
    Date of Patent: August 29, 2023
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Hua Huang, Phillip Skahan, Sang-Ho Oh, Ben Yonkee, Alexander Sztein, Qiyuan Wei
  • MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING SINGLE FREQUENCY LASER DIODE
    Publication number: 20220344476
    Abstract: A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 27, 2022
    Applicant: KYOCERA SLD Laser, Inc.
    Inventors: Philip Chan, Phillip Skahan, Nick Pfister, Christian Zollner, James W. Raring
  • Facet on a gallium and nitrogen containing laser diode
    Patent number: 11139634
    Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: October 5, 2021
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Hua Huang, Phillip Skahan, Sang-Ho Oh, Ben Yonkee, Alexander Sztein, Qiyuan Wei
  • Facet on a gallium and nitrogen containing laser diode
    Patent number: 10559939
    Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: February 11, 2020
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Hua Huang, Phillip Skahan, Sang-Ho Oh, Ben Yonkee, Alexander Sztein, Qiyuan Wei