Patents by Inventor Phong N. Nguyen

Phong N. Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming implant regions relative to transistor gates
    Patent number: 7405110
    Abstract: The invention includes methods of forming implant regions between and/or under transistor gates. In one aspect, a pair of transistor gates is partially formed, and a layer of conductive material is left extending between the transistor gates. A dopant is implanted through the conductive material to form at least one implant region between and/or beneath the partially formed transistor gates, and subsequently the conductive material is removed from between the gates. The gates can be incorporated into various semiconductor assemblies, including, for example, DRAM assemblies.
    Type: Grant
    Filed: July 31, 2006
    Date of Patent: July 29, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Phong N. Nguyen
  • Semiconductor constructions
    Patent number: 7084015
    Abstract: The invention includes methods of forming implant regions between and/or under transistor gates. In one aspect, a pair of transistor gates is partially formed, and a layer of conductive material is left extending between the transistor gates. A dopant is implanted through the conductive material to form at least one implant region between and/or beneath the partially formed transistor gates, and subsequently the conductive material is removed from between the gates. The gates can be incorporated into various semiconductor assemblies, including, for example, DRAM assemblies.
    Type: Grant
    Filed: April 9, 2004
    Date of Patent: August 1, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Phong N. Nguyen
  • Semiconductor constructions
    Publication number: 20040188832
    Abstract: The invention includes methods of forming implant regions between and/or under transistor gates. In one aspect, a pair of transistor gates is partially formed, and a layer of conductive material is left extending between the transistor gates. A dopant is implanted through the conductive material to form at least one implant region between and/or beneath the partially formed transistor gates, and subsequently the conductive material is removed from between the gates The gates can be incorporated into various semiconductor assemblies, including, for example, DRAM assemblies.
    Type: Application
    Filed: April 9, 2004
    Publication date: September 30, 2004
    Inventor: Phong N. Nguyen
  • Methods of forming implant regions relative to transistor gates
    Patent number: 6723623
    Abstract: The invention includes methods of forming implant regions between and/or under transistor gates. In one aspect, a pair of transistor gates is partially formed, and a layer of conductive material is left extending between the transistor gates. A dopent is implanted through the conductive material to form at least one implant region between and/or beneath the partially formed transistor gates, and subsequently the conductive material is removed from between the gates. The gates can be incorporated into various semiconductor assemblies, including, for example, DRAM assemblies.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: April 20, 2004
    Assignee: Micron Technology, Inc.
    Inventor: Phong N. Nguyen