Patents by Inventor Phong Tuan Nguyen

Phong Tuan Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Direct and sequential formation of monolayers of boron nitride and graphene on substrates
    Patent number: 9355842
    Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: May 31, 2016
    Assignees: SunEdison Semiconductor Limited (UEN201334164H), Kansas State University Research Foundation
    Inventors: Michael R. Seacrist, Vikas Berry, Phong Tuan Nguyen
  • DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES
    Publication number: 20150144881
    Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.
    Type: Application
    Filed: January 29, 2015
    Publication date: May 28, 2015
    Inventors: Michael R. Seacrist, Vikas Berry, Phong Tuan Nguyen
  • Direct and sequential formation of monolayers of boron nitride and graphene on substrates
    Patent number: 9029228
    Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.
    Type: Grant
    Filed: May 9, 2013
    Date of Patent: May 12, 2015
    Assignees: SunEdision Semiconductor Limited (UEN201334164H), Kansas State University Research Foundation
    Inventors: Michael R. Seacrist, Vikas Berry, Phong Tuan Nguyen
  • DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES
    Publication number: 20130240830
    Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.
    Type: Application
    Filed: May 9, 2013
    Publication date: September 19, 2013
    Inventors: Michael R. Seacrist, Vikas Berry, Phong Tuan Nguyen