Patents by Inventor Phuong-Vu Ong

Phuong-Vu Ong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • STRAINED VOLTAGE-CONTROLLED MAGNETIC MEMORY ELEMENTS AND DEVICES
    Publication number: 20170092842
    Abstract: A magnetic memory bit structure using voltage-controlled magnetic anisotropy (VCMA) for switching the state of at least one magnetic free layer (FL) is configured for inducing strain to achieve very large VCMA coefficients, toward reducing the electric field potential and/or voltage required for switching the state of the magnetic free layer (FL). The disclosed apparatus and method increases voltage-controlled magnetic anisotropy (VCMA) efficiency, which is the change of interfacial magnetic anisotropy energy per unit electric field, thus exploiting strain engineering in designing next generation MeRAM devices which operate more efficiently with lower switching thresholds.
    Type: Application
    Filed: August 29, 2016
    Publication date: March 30, 2017
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, CALIFORNIA STATE UNIVERSITY, NORTHRIDGE
    Inventors: Pedram Khalili Amiri, Qi Hu, Kang L. Wang, Nicholas Kioussis, Phuong-Vu Ong