Patents by Inventor Pi-Xuang Chuang

Pi-Xuang Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a semiconductor device
    Publication number: 20090053891
    Abstract: A method for fabricating a semiconductor device for preventing a poisoned via is provided. A substrate with a conductive layer formed thereon is provided. A composite layer is formed over the substrate and the conductive layer, wherein the composite layer comprises a dielectric layer and a spin-on-glass layer. A via hole is formed through the composite layer, wherein the via hole exposes a surface of the conductive layer. A protection layer is formed on a sidewall of the via hole so as to prevent out-gassing from the spin-on-glass layer. A barrier layer is formed on the protection layer and the conductive layer within the via hole. And a metal layer is deposited on the barrier layer within the via hole to fill the via hole.
    Type: Application
    Filed: August 22, 2008
    Publication date: February 26, 2009
    Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR
    Inventors: Yi-Chin Lin, Chia-Wei Hsu, Yeou-Bin Lin, Yi-Tsung Jan, Sung-Min Wei, Chin-Cherng Liao, Pi-Xuang Chuang, Shih-Ming Chen, Hsiao-Ying Yang