Patents by Inventor Pia Homm Jara

Pia Homm Jara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING VANADIUM NITRIDE-CONTAINING LAYER AND STRUCTURE COMPRISING THE SAME
    Publication number: 20240150892
    Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.
    Type: Application
    Filed: January 5, 2024
    Publication date: May 9, 2024
    Inventors: Pia Homm Jara, Werner Knaepen, Dieter Pierreux, Bert Jongbloed, Panagiota Arnou, Ren-Jie Chang, Qi Xie, Giuseppe Alessio Verni, Gido van der Star
  • Method of forming vanadium nitride-containing layer
    Patent number: 11898243
    Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: February 13, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Pia Homm Jara, Werner Knaepen, Dieter Pierreux, Bert Jongbloed, Panagiota Arnou, Ren-Jie Chang, Qi Xie, Giuseppe Alessio Verni, Gido van der Star
  • METHOD OF FORMING VANADIUM NITRIDE–CONTAINING LAYER AND STRUCTURE COMPRISING THE SAME
    Publication number: 20210332476
    Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.
    Type: Application
    Filed: December 7, 2020
    Publication date: October 28, 2021
    Inventors: Pia Homm Jara, Werner Knaepen, Dieter Pierreux, Bert Jongbloed, Panagiota Arnou, Ren-Jie Chang, Qi Xie, Giuseppe Alessio Verni, Gido van der Star