Abstract: This invention relates to a crop-selective, herbicidal agent 1-{[o-(cyclopropylcarbonyl)phenyl]sulfamoyl}-3-(4,6-dimethoxy-2-pyrimidiny l)urea, a method for the preparation thereof and a method for selectively controlling undesirable plant species in the presence of crops with the crop-selective sulfamoyl urea derivative.

Abstract: The invention relates to selective herbicidal 4-cyano-4-(fluorophenyl)-3-(substituted-phenyl)butyric acids, esters and derivatives thereof, and a method of selectively controlling undesirable vegetation in rice therewith.

Abstract: A preparation of freeze-dried microorganisms and a method for preparing a freezed-dried suspension of microorganisms and culture medium, in which the freeze-dried microorganisms can be directly cultured via addition of setrile, distilled water. The freeze-dried preparation contains a sufficient amount of a colloidal component, such as gelatin, to form the microorganisms into a microbial plug.

Abstract: A preparation of freeze-dried microorganisms and method for preparing a freeze-dried suspension of microorganisms and culture medium in which the freeze dried microorganisms can be directly cultured simply by adding sterile distilled water to the vessel in which the microorganisms are freeze-dried.

Abstract: Described are procedures for fabricating silicon devices which prevent the formation and/or activation of stacking fault nucleation sites during high temperature processing steps, such as steam oxidation of silicon wafers. The procedures, which take place before such high temperature steps, include forming on the back surface of the wafer a stressed layer and then annealing the wafer for a time and at a temperature effective to cause the nucleation sites to diffuse to a localized region near to the back surface. Illustratively the stressed layer comprises silicon nitride or aluminum oxide. Enhanced gettering is achieved if, prior to forming the stressed layer, interfacial misfit dislocations are introduced into the back surface by, for example, diffusion of phosphorus therein. Following the gettering step(s) on the back surface, conventional procedures, such as growing epilayers and/or forming p-n junctions, are performed on the front surface of the wafer.

Abstract: Described is a procedure for virtually eliminating disclocations in multilayer structures of materials having a crystallographic zinc-blend structure, in particular quaternary layers of Al.sub.y Ga.sub.1.sub.-y As.sub.1.sub.-z P.sub.z grown on Al.sub.x Ga.sub.1.sub.-x As substrates (y > x .gtoreq. 0). By carefully controlling the quaternary layer thickness and the lattice parameter mismatch at the growth temperature, it is possible to change the direction of substrate dislocations as they enter the substrate/layer interface. The length of the dislocation in the interfacial plane can be extended so that it is "infinitely" long, i.e., it reaches the edge of the wafer. As a result, the epitaxial quaternary layer and all layers subsequently grown thereon will be virtually dislocation free, provided that the thickness, stress and uniformity of the layers are such that no surface dislocation souces are activated.