Abstract: A dispersing agent for use in a thermosetting composition, a thermosetting composition containing said dispersing agent, and application thereof to thermosetting composition having no yield point. The dispersing agent acting on mineral fillers and used in filled acrylic or polyester resin-based thermosetting compositions belongs to the family of organophosphates corresponding to the general formula: ##STR1## where: A is a branched or unbranched polyaryl group,x and y are whole numbers between 0 and 100 such that x+y is a whole number greater than 40 but not greater than 100, ##STR2## B and E are independently a branched or unbranched polyaryl group, or an alkyl, aryl, arylalkyl, alkylaryl, alkanoyl, or amine radical, and in B and E, and R.sub.1 and R.sub.2 may be identical or different, x1, y1, x2 and y2 are whole numbers, and the sums x1+y1 and x2+y2 are not greater than 100.

Abstract: The invention relates to integrated circuits and their manufacture.A process is described for producing electrodes juxtaposed very close together, such as those encountered in charge-coupled shift registers. According to the invention, a first polycrystalline-silicon layer (14) is deposited and a localised oxidation is performed over a small width, in order to tcwtcwdivide the layer into two electrodes (15 and 17). The layer zone which has been oxidised between the two electrodes is then totally deoxidised, in order to produce a hollowed-out space in which it will be possible to house a third electrode (38). This third electrode, also made from polycrystalline silicon, is deposited after a slight insulating layer has been reformed on the side walls of the electrodes 15 and 17. As the width of the hollowed-out space between the two first electrodes is small, a polycrystalline-silicon overthickness is formed.

Abstract: A dispersing agent for use in a thermosetting composition, a thermosetting composition containing said dispersing agent, and application thereof to thermosetting composition having no yield point. The dispersing agent acting on mineral fillers and used in filled acrylic or polyester resin-based thermosetting compositions belongs to the family of organophosphates corresponding to the general formula: ##STR1## where: A is a branched or unbranched polyaryl group,x and y are whole numbers between 0 and 100 such that x+y is a whole number greater than 40 but not greater than 100, ##STR2## B and E are independently a branched or unbranched polyaryl group, or an alkyl, aryl, arylalkyl, alkylaryl, alkanoyl, or amine radical, and in B and E, and R.sub.1 and R.sub.2 may be identical or different, x1, y1, x2 and y2 are whole numbers, and the sums x1+y1 and x2+y2 are not greater than 100.

Abstract: A method for the manufacture of integrated circuits where it is desired to produce narrow conducting grids separated by a narrow gap and uses the lifting-up of silicon nitride (bird's bill) which is formed during a thick localized oxidation. A localized oxidation step is carried out and the oxide formed is totally removed. The edges (20, 22) of a nitride layer (14) stay overhanging. A conforming polycrystalline-silicon deposition enables silicon to be deposited uniformly, including beneath these edges. Finally, vertical anisotropic etching removes the silicon everywhere except beneath the overhanging edges, so that two silicon lines (28, 30) remain. An ion implantation (34) may be performed between the two lines. The method will find particular application for making anti-dazzle systems for photosensitive charge-coupled devices.

Abstract: The ground anchored post is made exclusively from the steel-belted treads and metallic wire rings of reclaimed, used, pneumatic tires. Each used tire is cut with a shearing tool to remove therefrom the rubber side walls thereof. A selected number of treads are then compressed flatly against one another, while a plurality of wire rings engage by their hollow the compressed pack of treads. The total number of treads selected is a function of the thickness of each tread and of the diameter of the tires, whereby the number of treads is high enough to provide taut, friction-fit engagement of the wire rings around the pack of treads. The taut engagement of wire rings around the pack of treads positively prevents the treads from engaging in sliding displacement relative to one another.

Abstract: This microwave link connects a fixed set of electronic equipment to a mobile set of electronic equipment that can be shifted between two extreme positions, at least one of which is an operating position. The link is, for example, one between a radar transceiver and a radar antenna that can be retracted into a silo. It is constituted by a sequence of rigid rectangular waveguide elements hinged at their ends by means of hinges comprising at least one rotating connector formed by two rectangular-window flanges, fitted together and rotational movable with respect to each other. This rotational connector has two operational positions at 180.degree. with respect to each other where it can transmit microwave power and where the rectangular windows of its flanges coincide, and it assumes one of these operational positions when the movable electronic equipment is in the operating position.

Abstract: The derailleur includes a relatively long, torsion-resisting bar extending below and generally along one of the two rear wheel-supporting bicycle frame members. The front end of said bar is held by a fastener secured to the bicycle frame adjacent the housing of the pedalling axle. The holder prevents the bar from rotating about its long axis. The rear end of the bar is movable transversely of the frame member by a remote control actuator. The rear end of said bar carries a drive chain idle transfer and a chain take-up device which serve to transfer the drive chain from one to another rear drive sprocket, while taking up the slack in the chain. The chain take-up device preferably comprises an elongated member supported by and extending alongside the bar, movable longitudinally along said bar and carrying at its rear end a drive chain engaging idle sprocket. The elongated member is biased rearwardly.

Abstract: The coupling device is of the plug-like switch type in which the plug has three internal conduits separated from one another. These internal conduits enable at least two of the other input conduits to be made to communicate with one another, depending on the angular position of the plug. A device such as this can be used to disconnect a malfunctioning emitter and thus prevent any loss of power.

Abstract: A device for the injection of electrons into an electron tube, having: a superconductive bar, a first end of which enters the tube, and an electrical supply. The bar acts as a cathode. Two anodes, a main anode and a secondary anode are placed in the tube, respectively in the place where the electrons are collected and in the place where the first end of the bar enters. The electrical supply provides for application of two voltages, a main voltage and a secondary voltage. Electrons are accelerated along the bar through the two voltages and acquire a kinetic energy which is at least equal to the energy of extraction from the superconductor, and are thus ejected outside the bar.

Abstract: According to the invention, a first layer of conductive material (11) is submitted to an incomplete etching operation in the presence of a mask (13). After elimination of the mask, a second layer of conductive material is deposited, and the thus-obtained result is submitted to an etching operation without a mask, so allowing the inter-electrode gaps to be reduced.The process provides a very tight electrode configuration, and is particularly suited to charge-coupled devices.

Abstract: A charge transfer device in which, during manufacture, a first upper electrode does not entirely cover a space separating two lower electrodes, and the zone thus left free is filled by a conductive material of the same type as the first upper electrode part. The method according to the invention allows simple manufacture without restrictions as to the positioning of the masks for manufacturing the electrodes, and allows manufacture without covering of the upper and lower electrodes, thereby allowing to reduce the stray capacities.

Abstract: A charge transfer memory and its fabrication method are disclosed. The memory has charge transfer shift registers, with four phases and two level of electrodes, and a reading register with two phases and three levels of electrodes. At one end of each shift register, there is a final electrode contiguous with a reading storage electrode of the reading register, which is itself contiguous to a reading transfer electrode. These electrodes are made in a layer, with a second type of doping, of a semiconductor substrate with a first type of doping. Zones with a third type of doping are made facing the transfer electrodes of the reading register. According to the invention, facing the final electrode of each shift register, a zone with a fourth type of doping is made. This zone with a fourth type of doping prevents charges flowing in the reading register from returning to a shift register.

Abstract: Disclosed are a charge-coupled device with lowering of output potential as well as a method for the fabrication of this device. In a known way, the device comprises, upstream on a semiconducting substrate with a first type of doping (P), a semiconducting layer with a second type of doping (N) and an insulating layer covering the former layer. Pairs of electrodes are formed on the insulating layer. Each pair has a transfer electrode and a storage electrode. Zones with a third type of doping N.sup.+) are made in the layer of a second type (N). A layer with a third type of doping (N.sup.-) is made downstream, in the layer with a second type of doping, and, downstream, there is formed at least one other pair of additional transfer and storage electrodes. A zone with a fourth type of doping (N.sup.--) is made beneath the additional transfer electrode in the layer with a third type of doping (N.sup.-).

Abstract: A bicycle which comprises a frame carrying at its rear end a wheel actuated by a pedal mechanism while the front end carries a collar. A brace is pivoted to the frame in the region of the pedal mechanism and so is a saddle post. The front end of the brace also carries a collar, both collars are slideable along an upright stem carrying the handle bars at the upper end and the front wheel of the bicycle at its lower end. A latch releasably holds the frame collar on the lower end of the stem while a cable attached at both ends to the handle bar and to the brace collar and also attached to the brace collar serves to maintain the latter in an intermediate position along the stem, whereby the brace, the front portion of the frame and the lower part of the stem forms a triangle holding the bicycle in erected position. A releasable stay rod pivotally connected to the saddle post and releasably latched to the rear portion of the frame, maintains the saddle in erected position.

Abstract: A photosensitive semiconductor device is provided comprising transparent gates, whose side walls are made from silicide and which, apart from these side walls, are formed from polycrystalline silicon.

Abstract: Process of manufacturing a charge transfer device wherein lower electrodes have enlarged portions and narrowed portions which mesh with the mating portions of any adjacent lower electrode, upper electrodes cover the intervals defined between adjacent lower electrodes and at least part of said enlargened portions thereof, these intervals which are not covered by the upper electrodes are subjected to an impurity diffusion.

Abstract: The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases:formation of a dielectric layer on a substrate;formation of semiconducting or conducting elements which are to serve as mask for implantation;implantation;formation of a layer of conducting or semiconducting material;cutting out electrodes from said layer and from the semiconducting or conducting elements.

Abstract: A gate structure for integrated circuits and more especially for photosensitive charge-transfer devices comprises elements of the gate-insulator-semiconductor type. The gate structure is constituted by a thin film-layer of transparent or semi-transparent conductive material covered with a layer of compatible insulating material having a refractive index higher than 1.5.

Abstract: In order to fabricate gates for an integrated circuit formed on a semiconductor substrate of silicon covered with at least one layer of oxide, one layer of polycrystalline silicon and if necessary one layer of silicide, an initial step consists in successive deposition of a silicon nitride layer and a silicon oxide layer, openings in these two layers being then formed by photoetching in a second step. In a third step, the silicon oxide layer is partly removed by deoxidation in order to bare the nitride layer over a certain distance which determines the spacing between two consecutive gates, oxide being then grown within the openings formed during the second step. The final step consists in removing the nitride regions uncovered during the third step as well as the subjacent silicide layer if this latter is provided and the subjacent polycrystalline silicon layer.

Abstract: The invention provides a method for forming a semiconductor device having several gate levels, which, in the case of forming a device with two gate levels, comprises the following steps:1. on a semiconductor substrate are deposited a dielectric layer, then a layer of material in which the gates of the first level are to be formed and a dielectric layer;2. the gates of the first level are formed by etching the two upper layers;3. the sides of the gates of the first level are isolated;4. a second layer is deposited of material in which the gates of the second level are to be formed;5. in this second layer an opening is formed giving access to the dielectric layer covering the top of the gates of the first level;6. by plasma etching or by chemical etching the zones of said second layer which overhang the gates of the first layer are removed by etching them simultaneously on their internal and external faces.