Abstract: A device for discriminating Cerenkov and scintillation radiation and a beam inspection device, including an inspection head comprising a scintillator and at least one ionizing radiation diffuser block, a device for discriminating Cerenkov and scintillation radiation, and an imaging system for forming an image from at least a part of the inspection head, along with a corresponding method. In order to suppress spurious Cerenkov radiation contributions to the scintillation radiation, the device has periodically arranged first and second filters, having different relative absorption properties with respect to scintillation radiation and ionizing radiation.

Abstract: The invention concerns an ellipsometer comprising: a source (2) capable of emitting a broadband ray (4), a polarizer (10) for producing a polarised incident beam (12) adapted to illuminate a sample (16) according to at least a selected angle; an analyzer (24) providing an output beam (28) in response to said reflected beam (20) and at least a reflecting optical element (14) arranged between the source (2) and the sample (16) and/or between the sample (16) and the sensor, and capable of focusing the incident beam (12) and/or the reflected beam (20) according to a selected spot The ellipsometer further comprises at least a first refracting optical element (22) arranged between the sample (16) and the sensor and/or between the source (2) and the sample (16) to collect and focus said reflected beam and/or said incident beam, thereby enabling to provide at least a refracting element (22) and a reflecting element (14) on either side of the sample (16) and hence to place the source and the sensor on the same side re

Abstract: The invention concerns an ellipsometer comprising a source (S) supplying at least an infrared radiation, a sample-holder (PE), a sensor (D), a first optical system mounted between the source (S) and the sample-holder (PE), so as to illuminate a sample placed on the sample-holder, under oblique view with a polarised light beam and a second optical system mounted between the sample-holder (PE) and the sensor (D) for collecting the light reflected by the sample. The ellipsometer further comprises a blocking device (F2) mounted on the reflection path in the focal plane of the focusing device (M2) of the second optical system, and adapted to block parasite rays (RP) derived from the rear surface (FAR) of the sample and to allow through useful rays (RU) derived from the front surface (FAV) of the sample towards the sensor (D), thereby enabling to obtain a resolution with respect to the sample front and rear surfaces.

Abstract: The invention concerns an ellipsometer comprising: a source (2) capable of emitting a broadband ray (4), a polarizer (10) for producing a polarised incident beam (12) adapted to illuminate a sample (16) according to at least a selected angle; an analyzer (24) providing an output beam (28) in response to said reflected beam (20) and at least a reflecting optical element (14) arranged between the source (2) and the sample (16) and/or between the sample (16) and the sensor, and capable of focusing the incident beam (12) and/or the reflected beam (20) according to a selected spot The ellipsometer further comprises at least a first refracting optical element (22) arranged between the sample (16) and the sensor and/or between the source (2) and the sample (16) to collect and focus said reflected beam and/or said incident beam, thereby enabling to provide at least a refracting element (22) and a reflecting element (14) on either side of the sample (16) and hence to place the source and the sensor on the same side re

Abstract: An ellipsometric metrology apparatus for a sample contained in a chamber. A light source outside the chamber produces the illuminating beam. A polarizing device outside the chamber polarizes the illuminating beam. A window of selected dimensions and features is disposed in a plane substantially parallel to the sample surface and at least partly closes the chamber. A first directing device directs the polarized illuminating beam on to an area of the sample along a first optical path extending from the polarizing device to the area of the sample through the window. The first optical path forms a predetermined oblique angle of incidence relative to the sample surface. A polarization analyzing device is outside the chamber, a second directing device directs the reflected beam resulting from the illumination of the sample by the illuminating beam on to the analyzing device along a second optical path extending from the sample towards the analyzing device through the window.

Abstract: An ellipsometric metrology apparatus for a sample contained in a chamber. A light source outside the chamber produces the illuminating beam. A polarizing device outside the chamber polarizes the illuminating beam. A window of selected dimensions and features is disposed in a plane substantially parallel to the sample surface and at least partly closes the chamber. A first directing device directs the polarized illuminating beam on to an area of the sample along a first optical path extending from the polarizing device to the area of the sample through the window. The first optical path forms a predetermined oblique angle of incidence relative to the sample surface. A polarization analyzing device is outside the chamber, a second directing device directs the reflected beam resulting from the illumination of the sample by the illuminating beam on to the analyzing device along a second optical path extending from the sample towards the analyzing device through the window.

Abstract: A laser surface method involves applying a laser beam treatment in one or several steps to a series of generally similar surfaces of given depth. Properties of the laser treatment are selected so as to change the physical state of each surface. Ellipsometry measurements are made in a region of the first surface before application of the laser beam treatment to the second surface, so as to obtain a physico-chemical characterization of the first surface. Both the laser beam application and the ellipsometry measurement are conducted under generally similar working conditions, so that the change of the physical state of each surface produced by the laser treatment can be controlled in a real time, in-situ, rapidly and nondestructively.

Abstract: Device of the mirror type in the range of X-UV rays, comprises a periodic stack, on a support, of a system of superimposed layers, which system includes a lower layer of a first heavy element reflecting at the wavelengths of application of the mirror, and an upper spacer layer of a light element which has low optical absorption at these wavelengths. The system of superimposed layers comprises, between the lower layer and the upper layer, an intermediate layer of a second heavy element reflecting at the wavelengths of application to form a three-layer system. The heavy elements are selected to form together with the spacer element first and second pairs, first of which has greater absorption at the wavelengths of application and exhibits a ratio of contrast of real and complex indices lower than the other second pair. The heavy element of the first pair forms the lower layer of the three-layer system, the intermediate layer being composed of the heavy element of the second pair.