Abstract: A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.

Abstract: A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.

Abstract: An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

Abstract: A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.

Abstract: An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

Abstract: A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.

Abstract: An integrated circuit includes copper lines, wherein the crystal structure of the copper has a greater than 30% <001 > crystal orientation and a less than 20% <111> crystal orientation.

Abstract: An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission.

Abstract: An electronic component comprising several superimposed layers of materials including a TiCN barrier layer. A process for depositing a TiCN layer in order to obtain an electronic component, where a titanium precursor is chosen from among tetrakis (dimethylamido) titanium and/or tetrakis (diethylamido) titanium and is decomposed on a substrate by plasma-enhanced atomic layer deposition (PEALD) where the plasma is obtained with a hydrogen-rich gas which can contain nitrogen with at most 5 atomic % nitrogen and at least 95 atomic % hydrogen.

Abstract: A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.

Abstract: A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.

Abstract: An integrated circuit includes copper lines, wherein the crystal structure of the copper has a greater than 30% <001 > crystal orientation and a less than 20% <111> crystal orientation.

Abstract: A flexible rod (20) is articulated at a first end to a control ring (30) and is fixed at a second end to a pivot of a blade (10) that is to be controlled. At this second end, it is held so that it can rotate without play on the blade pivot by a holding device (44; 52; 54). The articulation device comprise a pivot (24) passing through a first orifice (22) pierced in this first end and engaged in a radial housing (28) of the control ring, the pivot being held in position by a locking ring (34) which has openings (36) for the passage of this pivot and which slides on this control ring. The fixing device comprise a fixing screw (40) passing through a second orifice (38) pierced in the second end of the rod and introduced into a hole (42) of the pivot of the blade that is to be controlled.

Abstract: In a turbomachine compressor stator comprising a plurality of variable-pitch vanes (36), each vane mounted in rotation, about an axis of pivoting (38), in a wall (34) forming a surface of revolution about a longitudinal central axis of rotation of the turbomachine (32), being inclined by a specified angle (&agr;) with respect to a plane perpendicular to this longitudinal central axis, there is provision for this wall to be machined locally opposite an end part of each vane (42) so as to form a spherical portion or pocket (40) whose center is positioned on the axis of pivoting and whose radius is determined so as to ensure, over the entire range of operation of the vane, a predetermined minimum clearance between this end part of each vane and the opposite machined spherical pocket while limiting the depth of machining of this pocket.

Abstract: In a turbomachine compressor stator comprising a plurality of variable-pitch vanes (36), each vane mounted in rotation, about an axis of pivoting (38), in a wall (34) forming a surface of revolution about a longitudinal central axis of rotation of the turbomachine (32), being inclined by a specified angle (&agr;) with respect to a plane perpendicular to this longitudinal central axis, there is provision for this wall to be machined locally opposite an end part of each vane (42) so as to form a spherical portion or pocket (40) whose center is positioned on the axis of pivoting and whose radius is determined so as to ensure, over the entire range of operation of the vane, a predetermined minimum clearance between this end part of each vane and the opposite machined spherical pocket while limiting the depth of machining of this pocket.

Abstract: A flexible rod (20) is articulated at a first end to a control ring (30) and is fixed at a second end to a pivot of a blade (10) that is to be controlled. At this second end, it is held so that it can rotate without play on the blade pivot by holding means (44; 52; 54). The articulation means comprise a pivot (24) passing through a first orifice (22) pierced in this first end and engaged in a radial housing (28) of the control ring, the pivot being held in position by a locking ring (34) which has openings (36) for the passage of this pivot and which slides on this control ring. The fixing means comprise a fixing screw (40) passing through a second orifice (38) pierced in the second end of the rod and introduced into a hole (42) of the pivot of the blade that is to be controlled.