Patents by Inventor Pierre Coquille

Pierre Coquille has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100014201
    Abstract: The invention relates to integrated electronic circuits in MOS technology that have to be supplied by a cell or a battery that have a relatively high voltage capable of destroying the circuit in the event of a battery connection error, most particularly when a negative voltage is connected to an output of the integrated circuit. The logic output stage connected to this output comprises two pMOS transistors in series operating in push-pull mode under the control of the logic input signal, a first transistor being connected to a high supply terminal of the integrated circuit and the second transistor to a low supply terminal; the output is taken at the junction point of the two transistors. A conduction control circuit, capable of applying a negative voltage relative to the low supply terminal to the gate of the second transistor when the logic input signal passes to a level tending to turn off the first transistor, is interposed between the input and the gate of the second transistor.
    Type: Application
    Filed: October 31, 2007
    Publication date: January 21, 2010
    Applicant: E2V SEMICONDUCTORS
    Inventors: Thierry Masson, Pierre Coquille
  • Publication number: 20100007324
    Abstract: The invention relates to a temperature-independent voltage reference circuit. The circuit comprises a first circuit of bandgap type providing a first-order temperature-stable voltage, on the basis of a bipolar transistor base-emitter voltage having a negative slope of variation as a function of temperature, and of a voltage or a current having a positive slope of variation as a function of temperature provided by a generator of current proportional to absolute temperature. The base currents of the PMOS transistors thereof are compensated in such a manner that the output current is proportional to a collector current and not an emitter current.
    Type: Application
    Filed: October 5, 2007
    Publication date: January 14, 2010
    Applicant: E2V SEMICONDUCTORS
    Inventors: Thierry Masson, Jean-Francois Debroux, Pierre Coquille