Abstract: A control system includes an actuator, a locking/unlock device, a central control valve, first and second control valves, and a spool control valve. The actuator is arranged so as to move a door of a thrust reverser between direct jet and reverse jet positions. The locking/unlocking device unlockable under load allowing locking and/or unlocking of the door. The locking/unlocking device is movable between a closure position in which it holds the door in the direct jet position and an opening position in which the door is released. The first and second control valves each fed by the central control valve. The spool control valve fed at least by the first and second control valves. The spool control valve is configured so that a pressure difference between two inlets of the first and second control valves provides a displacement of the spool control valve between first and second stable positions.

Abstract: A curable silicone composition comprising (A) an alkenyl-containing organopolysiloxane comprising (A-1) a dialkylpolysiloxane that has an average of at least two alkenyl groups in each molecule), and (A-2) an alkenyl-containing, resin-form organopolysiloxane that comprises the SiO4/2 unit, R12R2SiO1/2 unit, and R13SiO1/2 unit; (B) an organopolysiloxane that has an average of at least three silicon-bonded hydrogen atoms in each molecule, wherein component (B) is an organopolysiloxane comprising (B-1) an organopolysiloxane that contains at least 0.7 mass % silicon-bonded hydrogen and that comprises SiO4/2 units and HR32SiO1/2 units in a ratio ranging from 1.50 to 2.50 moles of HR32SiO1/2 units per 1 mole of SiO4/2 units, at 50 to 100 mass % of component (B), and (B-2) a straight-chain organopolysiloxane that contains at least 0.3 mass % silicon-bonded hydrogen, at 0 to 50 mass % of component (B); and (C) a hydrosilylation reaction catalyst.

Abstract: Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.

Abstract: Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.

Abstract: An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.

Abstract: An apparatus for plasma treating a substrate comprises a high voltage source of frequency 3 kHz to 30 kHz connected to at least one needle electrode (11) positioned within a channel (16) inside a dielectric housing (14) having an inlet for process gas and an outlet. The channel (16) has an entry (16a) which forms the said inlet for process gas and an exit (16e) into the dielectric housing arranged so that process gas flows from the inlet through the channel (16) past the electrode (11) to the outlet of the dielectric housing. The apparatus includes means for introducing an atomised surface treatment agent in the dielectric housing, and support means (27, 28) for the substrate (25) adjacent to the outlet of the dielectric housing.

Abstract: A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas, usually comprising helium, to flow from the inlet past the electrode to the outlet, thereby generating a non-equilibrium atmospheric pressure plasma. An atomised or gaseous surface treatment agent is incorporated in the non-equilibrium atmospheric pressure plasma. The substrate is positioned adjacent to the plasma outlet so that the surface is in contact with the plasma and is moved relative to the plasma outlet. The velocity of the process gas flowing past the electrode is less than 100 m/s. Process gas is also injected into the dielectric housing at a velocity greater than 100 m/s. The volume ratio of process gas injected at a velocity greater than 100 m/s to process gas flowing past the electrode at less than 100 m/s is from 1:20 to 5:1.

Abstract: A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna.

Abstract: A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas to flow from the inlet past the electrode to the outlet, thereby generating a non-equilibrium atmospheric pressure plasma. An atomized or gaseous surface treatment agent is incorporated in the non-equilibrium atmospheric pressure plasma. The substrate is positioned adjacent to the plasma outlet so that the surface is in contact with the plasma and is moved relative to the plasma outlet. The flow of process gas and the gap between the plasma outlet and the substrate are controlled so that the process gas has a turbulent flow regime within the dielectric housing.

Abstract: The invention relates to method for preparing a chocolate composition comprising at least 10% cocoa butter, said method comprising the steps of: (a) Preparing a chocolate mixture comprising at least 10% cocoa butter by admixing a chocolate mass with a blend of an oil and/or fat having a Solid Fat Content higher than 2% when measured at 30° C. with IUPAC method 2.150 a, and having a Trans Fatty Acid Content below 4%, preferably below 2%, (b) Feeding this mixture in molten state to a scraped surface heat exchanger, wherein the temperature of the scraped surface is below +10° C., advantageously is below 0° C., (c) Crystallization and stabilization of said melt with the aid of said scraped surface heat exchanger, (d) Optionally, extrusion of the thus chilled mixture in block shape. This method advantageously allows the preparation of trans-free chocolate fillings, advantageously without the need of specialty products.

Abstract: A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.

Abstract: A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range ?30 to ?105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.

Abstract: A method is described of forming a film of an amorphous material on a substrate (14) by deposition from a plasma. The substrate (14) is placed in an enclosure, a film precursor gas is introduced into the enclosure through pipes (20), and unreacted and dissociated gas is extracted from the enclosure through pipes (22) so as to provide a low pressure therein. Microwave energy—is introduced into the gas within the enclosure as a sequence of pulses at a given frequency and power level to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The frequency and/or power level of the pulses is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

Abstract: A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

Abstract: An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.

Abstract: A method is described of forming a film of an amorphous material on a substrate (14) by deposition from a plasma. The substrate (14) is placed in an enclosure, a film precursor gas is introduced into the enclosure through pipes (20), and unreacted and dissociated gas is extracted from the enclosure through pipes (22) so as to provide a low pressure therein. Microwave energy—is introduced into the gas within the enclosure as a sequence of pulses at a given frequency and power level to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The frequency and/or power level of the pulses is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

Abstract: A method is disclosed for forming a film of an amorphous material, for example amorphous silicon, on a substrate (14), by deposition from a plasma. A substrate is placed in an enclosure having a defined volume, and a film precursor gas, for example silane, is introduced into the enclosure through pipes (20). Unreacted and dissociated gas is extracted from the enclosure through exit (22) so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distribution electron cyclotron resonance, and cause material to be deposited from the plasma on the substrate. The normalised precursor gas flow rate, defined as the precursor gas flow rate, divided by the area of the distributed plasma source, is greater than or equal to 700 sccm/m2, and the gas residence time, defined as the volume of the reactor divided by the effective precursor gas pumping rate, is not more than 30 ms.

Abstract: A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna.

Abstract: A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range ?30 to ?105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.

Abstract: A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.