Patents by Inventor Pierre Doussiere
Pierre Doussiere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230087429Abstract: Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical amplifier (SOA) may be positioned in a signal pathway between the optical port and the transmit module or the receive module. Other embodiments may be described and/or claimed.Type: ApplicationFiled: November 29, 2022Publication date: March 23, 2023Inventors: Giovanni Gilardi, Haijiang Yu, Ansheng Liu, Xiaoxing Zhu, Yuliya Akulova, Raghuram Narayan, Pierre Doussiere, Christian Malouin, Olufemi Dosunmu
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Publication number: 20230019747Abstract: Embodiments herein relate to an apparatus for use in a hybrid laser. The apparatus may include a silicon substrate and a waveguide to facilitate transmission of an optical signal in a first direction that is orthogonal to a surface of the silicon substrate. The apparatus may further include a metal shunt that is less than or equal to 10 micrometers from the waveguide in a second direction that is orthogonal to the surface of the silicon substrate and orthogonal to the first direction. Other embodiments may be described and/or claimed.Type: ApplicationFiled: September 23, 2022Publication date: January 19, 2023Inventors: Richard Jones, Pierre Doussiere, Aditi Mallik, Harel Frish, John Heck, Saeed Fathololoumi
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Publication number: 20220326357Abstract: A photonic integrated circuit including having a semiconductor substrate having integrated a semiconductor light source, the semiconductor light source comprising: an optically active section comprising a gain section and configured to support a first number of wavelengths, an optically passive section comprising a passive waveguide optically coupled to the optically active section and a passive section mirror optically coupled to the passive waveguide, wherein the optically passive section is configured to support a second number of wavelengths that is lower than the first number; and the optically passive section further comprising a signal shifting structure configured to shift a signal of the light supported by the passive waveguide.Type: ApplicationFiled: June 24, 2022Publication date: October 13, 2022Inventors: Animesh BANERJEE, William HAYENGA, Eduardo TEMPRANA GIRALDO, Pierre DOUSSIERE, Richard JONES, George RAKULJIC
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Patent number: 11217964Abstract: There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.Type: GrantFiled: December 28, 2018Date of Patent: January 4, 2022Assignee: Intel CorporationInventors: Pierre Doussiere, George A. Ghiurcan, Jonathan K. Doylend, Harel Frish
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Patent number: 10833481Abstract: Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.Type: GrantFiled: December 28, 2018Date of Patent: November 10, 2020Assignee: Intel CorporationInventors: Jonathan K. Doylend, Pierre Doussiere
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Publication number: 20190157837Abstract: There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.Type: ApplicationFiled: December 28, 2018Publication date: May 23, 2019Inventors: Pierre Doussiere, George A. Ghiurcan, Jonathan K. Doylend, Harel Frish
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Publication number: 20190140426Abstract: Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.Type: ApplicationFiled: December 28, 2018Publication date: May 9, 2019Inventors: Jonathan K. Doylend, Pierre Doussiere
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Patent number: 10193308Abstract: Embodiments may relate to a multiple quantum well (MQW) laser for operating at high temperatures, comprising at least one quantum well made of compressively strained InGaAlAs layers that are alternatively stacked with tensile strained InGaAlAs layers, the at least one quantum well surrounded on one side by a n-doped InP cladding and on the other by a p-doped InP cladding so as to form a double hetero-junction. A confinement layer of lattice-matched InAlAs may be provided between the quantum well and the p-doped cladding, having a first surface facing or adjacent to the quantum well and a second surface facing or adjacent to the p-doped cladding. An additional electron containment layer of tensile strained InAlAs may be provided facing or adjacent to one surface of the confinement layer, having a thickness smaller than that of the confinement layer. Other embodiments may be described and/or claimed.Type: GrantFiled: June 19, 2017Date of Patent: January 29, 2019Assignee: Intel CorporationInventor: Pierre Doussiere
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Publication number: 20180366914Abstract: Embodiments may relate to a multiple quantum well (MQW) laser for operating at high temperatures, comprising at least one quantum well made of compressively strained InGaAlAs layers that are alternatively stacked with tensile strained InGaAlAs layers, the at least one quantum well surrounded on one side by a n-doped InP cladding and on the other by a p-doped InP cladding so as to form a double hetero-junction. A confinement layer of lattice-matched InAlAs may be provided between the quantum well and the p-doped cladding, having a first surface facing or adjacent to the quantum well and a second surface facing or adjacent to the p-doped cladding. An additional electron containment layer of tensile strained InAlAs may be provided facing or adjacent to one surface of the confinement layer, having a thickness smaller than that of the confinement layer. Other embodiments may be described and/or claimed.Type: ApplicationFiled: June 19, 2017Publication date: December 20, 2018Inventor: Pierre Doussiere
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Publication number: 20180183211Abstract: Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.Type: ApplicationFiled: December 28, 2016Publication date: June 28, 2018Inventors: Pierre Doussiere, Jonathan K. Doylend
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Patent number: 10008828Abstract: Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.Type: GrantFiled: December 28, 2016Date of Patent: June 26, 2018Assignee: INTEL CORPORATIONInventors: Pierre Doussiere, Jonathan K. Doylend
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Patent number: 9397470Abstract: An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.Type: GrantFiled: April 23, 2015Date of Patent: July 19, 2016Assignee: Lumentum Operations LLCInventors: Jay A. Skidmore, Victor Rossin, Pierre Doussiere
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Publication number: 20150229101Abstract: An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.Type: ApplicationFiled: April 23, 2015Publication date: August 13, 2015Applicant: JDS Uniphase CorporationInventors: Jay A. Skidmore, Victor Rossin, Pierre Doussiere
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Patent number: 9077144Abstract: The invention provides a wavelength-controlled pump MOPA laser and a method of operation thereof. A monolithic semiconductor MOPA laser chip has a DFB-laser based MO (master oscillator) and PA (power amplifier) sections formed in a same monolithic waveguide, and separate MO and PA electrodes for individual control of current injection into the MO and PA sections. The laser wavelength is defined by the DFB grating and is kept fixed by suitably controlling the MO current to compensate for a thermal crosstalk from the PA section, or tuned by suitably changing the MO current or direct heating of the DFB region.Type: GrantFiled: September 30, 2013Date of Patent: July 7, 2015Assignee: JDS Uniphase CorporationInventors: Erik Paul Zucker, Victor Rossin, Pierre Doussiere
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Patent number: 9046359Abstract: An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.Type: GrantFiled: May 23, 2012Date of Patent: June 2, 2015Assignee: JDS Uniphase CorporationInventors: Jay A. Skidmore, Victor Rossin, Pierre Doussiere
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Publication number: 20150092800Abstract: The invention provides a wavelength-controlled pump MOPA laser and a method of operation thereof. A monolithic semiconductor MOPA laser chip has a DFB-laser based MO (master oscillator) and PA (power amplifier) sections formed in a same monolithic waveguide, and separate MO and PA electrodes for individual control of current injection into the MO and PA sections. The laser wavelength is defined by the DFB grating and is kept fixed by suitably controlling the MO current to compensate for a thermal crosstalk from the PA section, or tuned by suitably changing the MO current or direct heating of the DFB region.Type: ApplicationFiled: September 30, 2013Publication date: April 2, 2015Applicant: JDS UNIPHASE CORPORATIONInventors: Erik Paul Zucker, Victor Rossin, Pierre Doussiere
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Publication number: 20130314693Abstract: An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.Type: ApplicationFiled: May 23, 2012Publication date: November 28, 2013Applicant: JDS Uniphase CorporationInventors: Jay A. Skidmore, Victor Rossin, Pierre Doussiere
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Patent number: 7960743Abstract: The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile.Type: GrantFiled: December 5, 2008Date of Patent: June 14, 2011Assignee: JDS Uniphase CorporationInventor: Pierre Doussiere
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Publication number: 20100140632Abstract: The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile.Type: ApplicationFiled: December 5, 2008Publication date: June 10, 2010Applicant: JDS Uniphase CorporationInventor: Pierre Doussiere
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Patent number: 6411763Abstract: An integrated optical component having a first section (S1) including a wave guide (10) perpendicular to an output facet (P) of the component, a termination (T) of the wave guide being coupled to this facet, and including a second section (S2) upstream from the first section and capable of being interfered with by the signal reflected by the said facet and guided by the wave guide. The guide termination (T) includes an inclined guiding section (13) and a laterally non-guiding section (14) leading to this facet (P).Type: GrantFiled: September 23, 1999Date of Patent: June 25, 2002Assignee: AlcatelInventors: Helene Sillard, Francois Brillouet, Pierre Doussiere