Patents by Inventor Pierre Dusserre

Pierre Dusserre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6652647
    Abstract: The device according to invention comprises an ampoule (4) at the bottom of a crucible (3) for crystal growing by progressive solidification of a liquid, and a specific means of heating (9) to adjust the temperature of the volume of this gas pocket and establish an overpressure at the bottom of the crucible compared to the top in order to ensure a contraction of the crystal (2) at the moment of its solidification and to avoid defects in the crystals. By eliminating a pressure regulating circuit linking these two extreme regions in order to establish the overpressure directly, the lay out is considerably simplified and at the same time avoids condensations of the vaporised portions of the crystal in the pipes.
    Type: Grant
    Filed: August 27, 2002
    Date of Patent: November 25, 2003
    Assignees: Commissariat a l'Energie Atomique, Centre National d'Etudes Spatiales
    Inventors: Thierry Duffar, Pierre Dusserre, Nathalie Giacometti
  • Publication number: 20030019421
    Abstract: The device according to invention comprises an ampoule (4) at the bottom of a crucible (3) for crystal growing by progressive solidification of a liquid, and a specific means of heating (9) to adjust the temperature of the volume of this gas pocket and establish an overpressure at the bottom of the crucible compared to the top in order to ensure a contraction of the crystal (2) at the moment of its solidification and to avoid defects in the crystals. By eliminating a pressure regulating circuit linking these two extreme regions in order to establish the overpressure directly, the lay out is considerably simplified and at the same time avoids condensations of the vaporised portions of the crystal in the pipes.
    Type: Application
    Filed: August 27, 2002
    Publication date: January 30, 2003
    Inventors: Thierry Duffar, Pierre Dusserre, Nathalie Giacometti
  • Patent number: 6090201
    Abstract: A piston-activated crystal-growing apparatus includes a crucible for containing a seed and a solidifiable liquid covering the seed. In operation, thermal gradient is established in the crucible, and a piston moves within the crucible in the direction of the crystal.
    Type: Grant
    Filed: April 2, 1998
    Date of Patent: July 18, 2000
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Thierry Duffar, Pierre Dusserre
  • Patent number: 5932005
    Abstract: The material of the crystal (2) formed by solidification is deposited in a crucible (1), whose wall is perforated by two ducts for the injection of pressure at different heights (6, 7). A differential pressure is created between the two ducts, the pressure of the lower duct (7) being higher by a value roughly equal to the hydrostatic pressure of the remaining liquid (3), so that a clearance (5) is spontaneously formed between the crystal (2) and the crucible (1) and problems caused by differential thermal contractions on cooling are avoided.
    Type: Grant
    Filed: December 11, 1997
    Date of Patent: August 3, 1999
    Assignees: Commissariat A L'Energie Atomique, Centre National D'Etudes Spatiales
    Inventors: Thierry Duffar, Jacques Abadie, Pierre Dusserre
  • Patent number: 4539173
    Abstract: The invention relates to a process for producing plates of a metallic or semimetallic material.The latter is in the form of a liquid mass entirely separated from the walls of a crucible by a liquid film of a second material. A group of plates is lowered into the crucible, in order that the liquid mass can solidify, while being separated from the plates by the protective liquid film.Application is to the production of photovoltaic silicon plates.
    Type: Grant
    Filed: March 17, 1983
    Date of Patent: September 3, 1985
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Claude Potard, Pierre Dusserre
  • Patent number: 4197273
    Abstract: The growth of a solid obtained by cooling a liquid solution is observed and controlled by measuring the variation in volume of the solid-liquid system at the time of solidification. The method is applicable to the control of oriented crystallization from an initial crystal seed or epitaxial growth on a substrate having a suitable crystal orientation. The rate of crystallization can be controlled by means of a furnace provided with means for producing regulated thermal gradients, temperature-measuring means, a chamber filled with an inert liquid, an open-topped container filled with the liquid to be solidified and immersed in the inert liquid, the container being suspended from one arm of the beam of an electrobalance.
    Type: Grant
    Filed: December 5, 1977
    Date of Patent: April 8, 1980
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Pierre Dusserre, Claude Potard
  • Patent number: 4096024
    Abstract: The growth of a solid obtained by cooling a liquid solution is observed and controlled by measuring the variation in volume of the solid-liquid system at the time of solidification. The method is applicable to the control of oriented crystallization from an initial crystal seed or epitaxial growth on a substrate having a suitable crystal orientation. The rate of crystallization can be controlled by means of a furnace provided with means for producing regulated thermal gradients, temperature-measuring means, a chamber filled with an inert liquid, an open-topped container filled with the liquid to be solidified and immersed in the inert liquid, the container being suspended from one arm of the beam of an electrobalance.
    Type: Grant
    Filed: June 2, 1976
    Date of Patent: June 20, 1978
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Pierre Dusserre, Claude Potard