Abstract: A CMOS image sensor (102) comprises: a set of Nk pixels with a specific global shutter architecture, including, for each pixel Pix#k, k varying from 1 to N, a device (104) for synchronously blocking the exposure, common to the various memory nodes MNk,m, m varying from 1 to M; a subsystem for the non-destructive fast readout of the M memory nodes MNk,m, m varying from 1 to M, of each pixel Pix#k, making it possible to control a decision criterion for each pixel; a decision mechanism, based on the computing of a criterion, making it possible to control the device for synchronously blocking the exposure, located at the pixel level, which criterion is defined on the basis of the results obtained by the non-destructive fast read operations on the various memory nodes MNk,m, m varying from 1 to M; a conventional full-resolution image readout subsystem (62) with analog-to-digital conversion. Figure for the abstract: FIG.

Abstract: The invention concerns a TOF vision camera and proposes an electronic control circuit comprising a modulation circuit MOD for modulating the carrier clock signal, applying a camera-specific pulse position modulation function k(t) in order to output a modulation clock signal fe which is applied in the camera as a camera light source modulation signal S-LED, in order to control the emission of a series of light pulses SE and in order to synchronously control the N capture phases ST0, ST1, ST2, ST3 of the matrix image sensor CI of the camera. This modulation clock signal fe is such that the clock pulses fe have a constant pulse duration Tp, fixed by the carrier frequency fp, where Tp=½fp, and with a variable time interval Toff between two successive pulses, modulated by said modulation function k(t), said time interval being at least equal to the pulse duration, defining a modulation clock cycle ratio fe that is variable but less than or equal to 50%.