Patents by Inventor Pierre Fau

Pierre Fau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electric connection element manufacturing method
    Patent number: 9460960
    Abstract: A surface of a silicon substrate is coated with a silicon oxide layer. A manganese silicate layer is then deposited on the silicon oxide layer using a process of performing at least one step of dipping the substrate into a manganese amidinate solution. A copper layer is then deposited on the manganese silicate layer using a process of performing a step of dipping the substrate into a copper amidinate solution. An anneal is performed to stabilize one or both of the manganese silicate layer and copper layer.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: October 4, 2016
    Assignees: STMICROELECTRONICS (TOURS) SAS, Centre National de la Recherche Scientifique-CNRS
    Inventors: Kilian Piettre, Pierre Fau, Jeremy Cure, Bruno Chaudret
  • ELECTRIC CONNECTION ELEMENT MANUFACTURING METHOD
    Publication number: 20160064278
    Abstract: A surface of a silicon substrate is coated with a silicon oxide layer. A manganese silicate layer is then deposited on the silicon oxide layer using a process of performing at least one step of dipping the substrate into a manganese amidinate solution. A copper layer is then deposited on the manganese silicate layer using a process of performing a step of dipping the substrate into a copper amidinate solution. An anneal is performed to stabilize one or both of the manganese silicate layer and copper layer.
    Type: Application
    Filed: August 28, 2015
    Publication date: March 3, 2016
    Applicants: STMICROELECTRONICS (TOURS) SAS, Centre National de la Recherche Scientifique - CNRS
    Inventors: Kilian Piettre, Pierre Fau, Jeremy Cure, Bruno Chaudret
  • Method for forming a seed layer for the deposition of a metal on a substrate
    Patent number: 9093381
    Abstract: A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, including the step of immersing the substrate in a bath containing a material from the ethoxysilane or siloxane family and a copper or nickel amidinate.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: July 28, 2015
    Assignees: STMICROELECTRONICS (TOURS) SAS, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Clément Barriere, Pierre Fau, Bruno Chaudret, Olivier Margeat
  • METHOD FOR FORMING A SEED LAYER FOR THE DEPOSITION OF A METAL ON A SUBSTRATE
    Publication number: 20110117271
    Abstract: A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, including the step of immersing the substrate in a bath containing a material from the ethoxysilane or siloxane family and a copper or nickel amidinate.
    Type: Application
    Filed: March 30, 2009
    Publication date: May 19, 2011
    Applicants: Centre National de la Recherche Scientifique, STMicroelectronics (Tours) SAS
    Inventors: Clément Barriere, Pierre Fau, Bruno Chaudret, Oliver Margeat
  • Method of forming metal colloids, metal colloids and method of forming a metal oxide sensitive layer for a chemical sensor device
    Patent number: 6395053
    Abstract: A method of forming a metal colloid comprising a plurality of particles, each particle comprising a core of a metal, is described. The method comprises the steps of providing an organometallic precursor comprising the metal, combining the organometallic precursor and a solvent, which comprises water molecules, heating the combination of organometallic precursor and solvent so that the organometallic precursor decomposes to form a solution including the metal colloid and by-products, and removing the by-products to provide the metal colloid.
    Type: Grant
    Filed: May 28, 1999
    Date of Patent: May 28, 2002
    Assignee: Motorola, Inc.
    Inventors: Pierre Fau, Celine Nayral, Bruno Chaudret, Andre Maisonnat