Abstract: The present disclosure relates to a method for probabilistic simulation of a microelectronic device, said method being implemented automatically by an electronic processing device and including the following steps: a) defining a plurality of first samples of the device from a probability distribution of at least one physical parameter of the device; b) for each first sample, determining, through an electrical simulation method, the value of at least one operating variable of the device; c) defining, by regression from values of the physical parameters and operating variables of the first samples simulated in step b), a mathematical model approximating the response of the electrical simulation method.