Abstract: An imager integrated circuit intended to cooperate with an optical system configured to direct light rays from a scene to an inlet face of the circuit, the circuit being configured to perform a simultaneous stereoscopic capture of N images corresponding to N distinct views of the scene, each of the N images corresponding to light rays directed by a portion of the optical system which is different from those directing the rays corresponding to the N?1 other images, including: N subsets of pixels made on a same substrate, each of the N subsets of pixels being intended to perform the capture of one of the N associated images, means interposed between each of the N subsets of pixels and the inlet face of the circuit, and configured to pass the rays corresponding to the image associated with said subset of pixels and block the other rays.

Abstract: A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to generate charge carriers in the photovoltaic solar cell. The device is further provided with a tank designed to be filled by a liquid, and the support is configured to place the photovoltaic solar cell in the liquid.

Abstract: The restoration device of least one silicon-based photovoltaic solar cell includes a support of the cell, a heat source configured to heat the photovoltaic solar cell, and unit for generating charge carriers in the cell. To better accelerate the restoration kinetics of the solar cell, the device includes an ultrasonic transducer designed to generate ultrasonic waves propagating in the photovoltaic solar cell.

Abstract: Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.

Abstract: The restoration device of least one silicon-based photovoltaic solar cell includes a support of the cell, a heat source configured to heat the photovoltaic solar cell, and unit for generating charge carriers in the cell. To better accelerate the restoration kinetics of the solar cell, the device includes an ultrasonic transducer designed to generate ultrasonic waves propagating in the photovoltaic solar cell.

Abstract: A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to generate charge carriers in the photovoltaic solar cell. The device is further provided with a tank designed to be filled by a liquid, and the support is configured to place the photovoltaic solar cell in the liquid.

Abstract: A gas detector including an assembly of two hemispherical caps having opposite concavities, and which are reflective on at least a portion of their opposite surfaces, and a wafer arranged in an equatorial plane of the assembly of the two caps, in the vicinity of but spaced apart from the center of the equatorial plane, including, back-to-back: a diverging light emitter directed towards the first cap and a light receiver directed towards the second cap.

Abstract: Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.

Abstract: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.

Abstract: An imager device including: an imager integrated circuit comprising a matrix of pixels, several first, second and third focusing means such that each focusing means is provided facing a group of four associated pixels forming a 2×2 matrix, and is capable of focusing light rays to the group of associated pixels, and perform focusing which are different and equivalent to an arrangement of groups of associated pixels at three distances which are different toward the inlet face for light rays in the imager device, fourth means capable of passing, with respect to each group of pixels, the light rays directed toward said group and passing through the focusing means associated with said group, and capable of blocking the light rays directed toward said group and passing through the other focusing means.

Abstract: Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), each of the n metal layers (m1, m2, m3) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2. Application to 3D mapping and imaging.

Abstract: An image sensor comprising at least: CMOS-type photodiodes and transistors produced in a semiconductor layer having a thickness of between approximately 1 ?m and 1.5 ?m, a dielectric layer in which electrical interconnect layers are made, which are electrically connected to one another and/or to the CMOS photodiodes and/or transistors, said dielectric layer being arranged against a first face of the semiconductor layer opposite a second face of the semiconductor layer through which the light received by the sensor from the exterior is intended to enter, light-reflecting means arranged in the dielectric layer, opposite the photodiodes, and capable of reflecting at least a portion of the light received by the sensor towards the photodiodes.

Abstract: A gas detector including an assembly of two hemispherical caps having opposite concavities, and which are reflective on at least a portion of their opposite surfaces, and a wafer arranged in an equatorial plane of the assembly of the two caps, in the vicinity of but spaced apart from the center of the equatorial plane, including, back-to-back: a diverging light emitter directed towards the first cap and a light receiver directed towards the second cap.

Abstract: An electrode of a light-emitting device of the OLED type adapted for forming with a second electrode, an optical cavity, including at least one layer based on a material of refraction index n1 including a structured face comprising a plurality of recesses filled with a material of refractive index n2 different from n1.

Abstract: The invention relates to an optical filtering structure consisting of a set of at least two elementary optical filters (R, V, B), an elementary optical filter being centered on an optimum transmission frequency, characterized in that it comprises a stack of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), the n metal layers (m1, m2, m3) each having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of an elementary optical filter, n being an integer larger than or equal to 2. Application to miniature image sensors.

Abstract: An imager device including: an imager integrated circuit comprising a matrix of pixels, several first, second and third focusing means such that each focusing means is provided facing a group of four associated pixels forming a 2×2 matrix, and is capable of focusing light rays to the group of associated pixels, and perform focusing which are different and equivalent to an arrangement of groups of associated pixels at three distances which are different toward the inlet face for light rays in the imager device, fourth means capable of passing, with respect to each group of pixels, the light rays directed toward said group and passing through the focusing means associated with said group, and capable of blocking the light rays directed toward said group and passing through the other focusing means.

Abstract: An imager integrated circuit intended to cooperate with an optical system configured to direct light rays from a scene to an inlet face of the circuit, the circuit being configured to perform a simultaneous stereoscopic capture of N images corresponding to N distinct views of the scene, each of the N images corresponding to light rays directed by a portion of the optical system which is different from those directing the rays corresponding to the N-1 other images, including: N subsets of pixels made on a same substrate, each of the N subsets of pixels being intended to perform the capture of one of the N associated images, means interposed between each of the N subsets of pixels and the inlet face of the circuit, and configured to pass the rays corresponding to the image associated with said subset of pixels and block the other rays.

Abstract: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.

Abstract: Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), each of the n metal layers (m1, m2, m3) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2. Application to 3D mapping and imaging.

Abstract: A device for interference spectroscopic analysis of radiation is of the interference type. The device includes at least a first reflecting layer onto which is deposited a multilayer of alternately transparent and photo-absorbing films. Each photo-absorbing layer is connected to an electronic detection unit supplying a primary electronic signal. The device also includes an electronic analyzing unit for analyzing the primary signals and configured in such a manner as to determine the spectral distribution of the original radiation.