Abstract: A power field effect transistor, a power field effect transistor device and a method of manufacturing a power field effect transistor are provided. During the manufacturing of the power field effect transistor, a body drive stage to manufacture the body region of the power field effect transistor is shortened to obtain a relatively low on resistance for the power field effect transistor. Before the implanting stage of the dopants of the body region, a pre body drive stage is introduced. During the pre body drive stage and the body drive stage sidewalls of a polysilicon layer of the power field effect transistor are oxidized to obtain a power field effect transistor which has at the sidewalls an oxidized polysilicon layer that is thick enough to prevent a premature current injection from the gate to the source regions of the power field effect transistor.

Abstract: A power field effect transistor, a power field effect transistor device and a method of manufacturing a power field effect transistor are provided. During the manufacturing of the power field effect transistor, a body drive stage to manufacture the body region of the power field effect transistor is shortened to obtain a relatively low on resistance for the power field effect transistor. Before the implanting stage of the dopants of the body region, a pre body drive stage is introduced. During the pre body drive stage and the body drive stage sidewalls of a polysilicon layer of the power field effect transistor are oxidized to obtain a power field effect transistor which has at the sidewalls an oxidized polysilicon layer that is thick enough to prevent a premature current injection from the gate to the source regions of the power field effect transistor.

Abstract: A transistor power switch device comprising a semiconductor body presenting opposite first and second faces, an array of vertical field-effect transistor elements for carrying current between the first and second faces is provided. The array of transistor elements comprises at the first face an array of source regions of a first semiconductor type, at least one body region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the second transistor region, and a conductive layer contacting the source regions and insulated from the control electrode by at least one insulating layer.

Abstract: A transistor power switch device comprising an array of vertical transistor elements for carrying current between the first and second faces of a semiconductor body and a vertical avalanche diode electrically in parallel with the array of vertical transistors. The array of transistor elements includes at the first face an array of source regions of a first semiconductor type, at least one p region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the p region, and a conductive layer contacting the source regions and insulated from the control electrode.

Abstract: A transistor power switch device comprising a semiconductor body presenting opposite first and second faces, an array of vertical field-effect transistor elements for carrying current between the first and second faces, is provided. The array of transistor elements comprises at the first face an array of source regions of a first semiconductor type, at least one body region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the second transistor region, and a conductive layer contacting the source regions and insulated from the control electrode by at least one insulating layer.

Abstract: A transistor power switch device comprising an array of vertical transistor elements for carrying current between the first and second faces of a semiconductor body and a vertical avalanche diode electrically in parallel with the array of vertical transistors. The array of transistor elements includes at the first face an array of source regions of a first semiconductor type, at least one p region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the p region, and a conductive layer contacting the source regions and insulated from the control electrode.