Abstract: A method and system for monitoring the quality of photovoltaic cells is described, the method including for each cell: an excitation step, during which the cell to be monitored is subjected to excitation at a predetermined level of excitation; a step of acquiring at least one luminescence image of the cell to be monitored after excitation; and a step of processing the acquired image. The invention is characterized in that, for each cell, there is provided a preliminary step for determining an excitation level adjusted to the cell, the respective adjusted excitation levels of the different cells to be monitored being adapted such that the luminescence intensities of the signals emitted by the different cells are equal at a given reference luminescence intensity.

Abstract: The invention provides a process for treating an n-type photovoltaic cell free from all but trace amounts of boron atoms, said process comprising the following steps: providing an n-type heterojunction photovoltaic cell (10) comprising a central crystalline silicon layer (1) on and under which two passivation layers (2, 3) made of hydrogenated amorphous silicon are deposited; heating this cell to a temperature between 20° C. and 200° C., for example on a hot plate (20) or in an oven (40), while illuminating the photovoltaic cell with a light flux from a light source (30). The efficiency of the photovoltaic cell is thus improved and stabilized.

Abstract: A method and system for monitoring the quality of photovoltaic cells is described, the method including for each cell: an excitation step, during which the cell to be monitored is subjected to excitation at a predetermined level of excitation; a step of acquiring at least one luminescence image of the cell to be monitored after excitation; and a step of processing the acquired image. The invention is characterized in that, for each cell, there is provided a preliminary step for determining an excitation level adjusted to the cell, the respective adjusted excitation levels of the different cells to be monitored being adapted such that the luminescence intensities of the signals emitted by the different cells are equal at a given reference luminescence intensity.

Abstract: A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

Abstract: A method and system for monitoring the quality of photovoltaic cells is described, the method including for each cell: an excitation step, during which the cell to be monitored is subjected to excitation at a predetermined level of excitation; a step of acquiring at least one luminescence image of the cell to be monitored after excitation; and a step of processing the acquired image. The invention is characterized in that, for each cell, there is provided a preliminary step for determining an excitation level adjusted to the cell, the respective adjusted excitation levels of the different cells to be monitored being adapted such that the luminescence intensities of the signals emitted by the different cells are equal at a given reference luminescence intensity.

Abstract: A method and system for monitoring the quality of photovoltaic cells is described, the method including for each cell: an excitation step, during which the cell to be monitored is subjected to excitation at a predetermined level of excitation; a step of acquiring at least one luminescence image of the cell to be monitored after excitation; and a step of processing the acquired image. The invention is characterized in that, for each cell, there is provided a preliminary step for determining an excitation level adjusted to the cell, the respective adjusted excitation levels of the different cells to be monitored being adapted such that the luminescence intensities of the signals emitted by the different cells are equal at a given reference luminescence intensity.

Abstract: The invention provides a process for treating an n-type photovoltaic cell free from all but trace amounts of boron atoms, said process comprising the following steps: providing an n-type heterojunction photovoltaic cell (10) comprising a central crystalline silicon layer (1) on and under which two passivation layers (2, 3) made of hydrogenated amorphous silicon are deposited; heating this cell to a temperature between 20° C. and 200° C., for example on a hot plate (20) or in an oven (40), while illuminating the photovoltaic cell with a light flux from a light source (30). The efficiency of the photovoltaic cell is thus improved and stabilized.

Abstract: A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

Abstract: A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

Abstract: A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

Abstract: The invention concerns a photovoltaic cell comprising a heterojunction between a crystalline semiconductor substrate (210) of first conductivity type and a first amorphous layer (220) in the same semiconductor material and of a second conductivity type opposite the first type and having a dopant concentration of between 1.1019 and 1.1022 atoms/cm3. The photovoltaic cell further comprises a second amorphous layer (225) of same conductivity type as the first layer and having a dopant concentration of between 1.1016 and 1.1018 atoms/cm3, said second layer being deposited directly on a first face of the substrate and being coated with said first layer. Finally, on a second face of the substrate opposite the first face, the cell comprises a third amorphous layer (260), in the same material as the substrate and of same conductivity type with a dopant concentration of between 1.1019 and 1.1022 atoms/cm3.

Abstract: A method for metallization of a semiconductor device. This method includes a) metallizing a set of collection fingers with a low-temperature serigraphy paste on at least a front surface of the semiconductor device, b) sintering, at a temperature below a temperature that would damage the semiconductor device, the serigraphy paste forming the set of metallized collection fingers, by performing a pressing operation on the collection fingers with a press, and c) metallizing at least one collection bus on the set of metallized collection fingers, electrically connecting the collection fingers to one another, with a low-temperature serigraphy paste.

Abstract: Method for metallization of at least one photovoltaic cell comprising a substrate based on a semiconductor with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell. The method comprises at least the steps of: a) producing at least one metallization on the front face of the photovoltaic cell, b) a first annealing of the photovoltaic cell at a temperature between around 800° C. and 900° C., c) producing at least one metallization on the rear face of the substrate, d) a second annealing of the photovoltaic cell at a temperature between around 700° C. and 800° C.

Abstract: A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.

Abstract: A method of forming contacts between at least one metallic layer and at least one semiconductor substrate through at least one layer of dielectric in a semiconductor device. The semiconductor device includes, on at least one base face of the semiconductor substrate, the dielectric layer. The metallic layer is stacked on the dielectric layer. The heated ends of plural protruding elements assembled on a support are brought into contact with the metallic layer simultaneously, thereby creating zones of melted metal under the heated ends of the protruding elements. The melted metal traverses the dielectric and amalgamates with the semiconductor of the substrate at the level of the zones of melted metal, thereby creating the contacts.

Abstract: The invention concerns a photovoltaic cell comprising a heterojunction between a crystalline semiconductor substrate (210) of first conductivity type and a first amorphous layer (220) in the same semiconductor material and of a second conductivity type opposite the first type and having a dopant concentration of between 1.1019 and 1.1022 atoms/cm3. The photovoltaic cell further comprises a second amorphous layer (225) of same conductivity type as the first layer and having a dopant concentration of between 1.1016 and 1.1018 atoms/cm3, said second layer being deposited directly on a first face of the substrate and being coated with said first layer. Finally, on a second face of the substrate opposite the first face, the cell comprises a third amorphous layer (260), in the same material as the substrate and of same conductivity type with a dopant concentration of between 1.1019 and 1.

Abstract: A method of forming contacts between at least one metallic layer and at least one semiconductor substrate through at least one layer of dielectric in a semiconductor device. The semiconductor device includes, on at least one base face of the semiconductor substrate, the dielectric layer. The metallic layer is stacked on the dielectric layer. The heated ends of plural protruding elements assembled on a support are brought into contact with the metallic layer simultaneously, thereby creating zones of melted metal under the heated ends of the protruding elements. The melted metal traverses the dielectric and amalgamates with the semiconductor of the substrate at the level of the zones of melted metal, thereby creating the contacts.

Abstract: This invention relates to a process for making a semiconductor device comprising the following steps: a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made, a first metallisation area is deposited on the doped region, a dielectric layer is deposited on at least the window and the first metallisation area, at least a first opening is etched in the dielectric layer at the window to accommodate a doped region with a second type of conductivity while arranging an undoped portion of the semiconductor substrate laterally between the doped regions, the substrate is doped to create the doped region with the second type of conductivity, a second metallisation area is deposited. Application particularly for solar cells in thin layer.

Abstract: Method for metallization of at least one photovoltaic cell comprising a substrate based on a semiconductor with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell. The method comprises at least the steps of: a) producing at least one metallization on the front face of the photovoltaic cell, b) a first annealing of the photovoltaic cell at a temperature between around 800° C. and 900° C., c) producing at least one metallization on the rear face of the substrate, d) a second annealing of the photovoltaic cell at a temperature between around 700° C. and 800° C.

Abstract: This invention relates to a process for making a semiconductor device comprising the following steps: a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made, a first metallisation area is deposited on the doped region, a dielectric layer is deposited on at least the window and the first metallisation area, at least a first opening is etched in the dielectric layer at the window to accommodate a doped region with a second type of conductivity while arranging an undoped portion of the semiconductor substrate laterally between the doped regions, the substrate is doped to create the doped region with the second type of conductivity, a second metallisation area is deposited. Application particularly for solar cells in thin layer.