Abstract: A mould for objects made of polymer material is produced by successively depositing a barrier thin layer and a thin layer of diamond-like carbon on at least a part of a metal support. The thin layer of diamond-like carbon is then nanopatterned with a predetermined pattern presenting a form factor of more than 1. Nanopatterning is performed by selective chemical etching in dry phase through a hard mask and etching stops at an interface between the thin layer of diamond-like carbon and the barrier thin layer. The hard mask used was formed beforehand on a free surface of the thin layer of diamond-like carbon by selective chemical etching in dry phase performed through a void lattice delineated by nanoparticles deposited beforehand on a free surface of said hard mask. The barrier thin layer and the nanopatterned thin layer of diamond-like carbon form a bilayer coating presenting a thickness comprised between about 100 nm and about 10 ?m.

Abstract: A mould for objects made of polymer material is produced by successively depositing a barrier thin layer and a thin layer of diamond-like carbon on at least a part of a metal support. The thin layer of diamond-like carbon is then nanopatterned with a predetermined pattern presenting a form factor of more than 1. Nanopatterning is performed by selective chemical etching in dry phase through a hard mask and etching stops at an interface between the thin layer of diamond-like carbon and the barrier thin layer. The hard mask used was formed beforehand on a free surface of the thin layer of diamond-like carbon by selective chemical etching in dry phase performed through a void lattice delineated by nanoparticles deposited beforehand on a free surface of said hard mask. The barrier thin layer and the nanopatterned thin layer of diamond-like carbon form a bilayer coating presenting a thickness comprised between about 100 nm and about 10 ?m.

Abstract: The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallizing, at least partly, the at least one first layer (13) using a technology for crystallizing silicon by pulsed electronic beam.

Abstract: The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallising, at least partly, the at least one first layer (13) using a technology for crystallising silicon by pulsed electronic beam.

Abstract: This invention relates to a multi-layer material that comprises a substrate made of aluminum, magnesium or their alloys, having possibly been subjected to a surface treatment, this substrate being provided with a coating comprising a tungsten based deposit and an under-layer--inserted between said substrate and said deposit--of a material having mechanical and thermo-mechanical properties intermediate to those of said substrate and said deposit. This under-layer is made up of at least one layer of a material chosen from among chromium, molybdenum, niobium, titanium, zirconium, their nitrides and carbides, solid solutions of carbon and of nitrogen in said metals, and steels and greatly improves the adherence of said coating to said substrate.The invention also relates to the anti-erosion, anti-abrasion, anti-wear coating comprising said tungsten based deposit and said under-layer.

Abstract: The invention relates to an apparatus usable for ionizing a gas comprising a cathode serving as a hot or cold cathode and to a process for using this apparatus. The apparatus includes a facing cathode and anode, the gas to be ionized successively traversing the cathode and the anode. The apparatus is characterized in that the cathode is formed by a first and second cylindrical half-electrode in face-to-face relation, the gas to be ionized passing between the half-electrode and a conductive filament connected by a first end to the first half-electrode and by a second end to the second half-electrode and located between the half-electrodes. The invention applied to all apparatuses used for ionizing a gas, such as electric arcs, unoplasmatrons and duoplasmatrons.