Abstract: The invention relates to a process for the production of a substrate for an electrically controlled device such as a display screen, said substrate integrating non-linear elements and control elements of the elementary display points. The invention relates to the production of a substrate, in its active part, has non-linear elements associated with each image element and produced from amorphous silicon and, in its peripheral part, polycrystalline silicon controlled elements. Initially the substrate has amorphous silicon layers, the peripheral crystallization being obtained by annealing in a temperature gradient furnace.

Abstract: The process consists of introducing into the silicon-containing layer at the same time as silicon deposition, another element of column IVa of the periodic classification in a proportion equal to or below 5% of the number of silicon atoms and greater than 0.1%. According to a preferred variant, this element is germanium. Deposition takes place at a temperature close to the crystallization temperature T. The process can comprise a subsequent phase during which the deposited layer undergoes heat treatment in an atmosphere of a plasma containing hydrogen or one of its isotopes at a temperature below the crystallization temperature T of the layer.

Abstract: Process for producing layers of silicon or one of its alloys in pure or doped form and able to absorb optical radiation, the layers being of limited thickness, it comprising a first stage of depositing the layer by chemical decomposition of a gaseous mixture containing silane at a temperature close to the crystallization temperature and a second stage of treating in a hydrogen plasma at a lower temperature.

Abstract: The invention relates to a process for the production of a substrate for an electrically controlled device such as a display screen, said substrate integrating non-linear elements and control elements of the elementary display points. The invention relates to the production of a substrate, in its active part, has non-linear elements associated with each image element and produced from amorphous silicon and, in its peripheral part, polycrystalline silicon controlled elements. Initially the substrate has amorphous silicon layers, the peripheral crystallization being obtained by annealing in a temperature gradient furnace.