Abstract: An embodiment of a microwave power generation module includes an amplifier arrangement, an impedance matching element, and a resonant element. The amplifier arrangement includes a transistor with a transistor input and a transistor output. The impedance matching element is formed from a planar conductive structure. The planar conductive structure has a proximal end and a distal end, and the proximal end is electrically coupled to the transistor output. The resonant element has a proximal end electrically coupled to the distal end of the planar conductive structure, and the resonant element is configured to radiate electromagnetic energy having a microwave frequency in a range of 800 megahertz (MHz) to 300 gigahertz (GHz). A combination of the impedance matching element and the resonant element is configured to perform an impedance transformation between an impedance of the transistor and an impedance of an air cavity.

Abstract: A cooking apparatus is provided. The cooking apparatus includes a cooking surface and a plurality of antennas coupled to the cooking surface. Each antenna in the plurality of antennas is configured to radiate radio frequency energy to generate heat in food over the cooking surface. The cooking apparatus includes a radio frequency power module configured to transmit electrical signals to the plurality of antennas to cause each antenna in the plurality of antennas to radiate the radio frequency energy.

Abstract: A radiation device and related method are presented. The radiation device includes a body. The body includes a threaded portion configured to engage with a threaded opening in an engine and an open interior volume. The radiation device includes a ground electrode coupled to the body, a substrate disposed within the open interior volume in the body, and a radio frequency generator on the substrate. The radio frequency generator is configured to receive an input signal and, in response to the input signal, generate plasma energy between the body and the ground electrode.

Abstract: An embodiment of a plasma ignition system for an internal combustion engine having up to N cylinders includes a power splitter, N phase shifters, N amplifiers, a power combiner network, and up to N radiation devices. The power splitter divides an input RF signal into N divided RF signals. Each phase shifter applies one of multiple pre-determined phase shifts to one of the N divided RF signals to produce N phase shifted RF signals. The N amplifiers amplify the N phase shifted RF signals to produce N amplified, phase shifted RF signals. The power combiner network combines the N amplified, phase shifted RF signals to produce N output RF signals. Each of the radiation devices receives one of the N output RF signals, and produces a plasma discharge when a power level of the output RF signal is sufficiently high.

Abstract: A radiation device and related method are presented. The radiation device includes a body. The body includes a threaded portion configured to engage with a threaded opening in an engine and an open interior volume. The radiation device includes a ground electrode coupled to the body, a substrate disposed within the open interior volume in the body, and a radio frequency generator on the substrate. The radio frequency generator is configured to receive an input signal and, in response to the input signal, generate plasma energy between the body and the ground electrode.

Abstract: An embodiment of a plasma ignition system for an internal combustion engine having up to N cylinders includes a power splitter, N phase shifters, N amplifiers, a power combiner network, and up to N radiation devices. The power splitter divides an input RF signal into N divided RF signals. Each phase shifter applies one of multiple pre-determined phase shifts to one of the N divided RF signals to produce N phase shifted RF signals. The N amplifiers amplify the N phase shifted RF signals to produce N amplified, phase shifted RF signals. The power combiner network combines the N amplified, phase shifted RF signals to produce N output RF signals. Each of the radiation devices receives one of the N output RF signals, and produces a plasma discharge when a power level of the output RF signal is sufficiently high.

Abstract: According to one aspect of the present invention, an electronic assembly is provided. The electronic assembly comprises a substrate with a lead connected thereto and first and second microelectronic components on the substrate. The first microelectronic component has first and second portions. A plurality of conductors interconnects the first microelectronic component and a selected one of the lead and the second microelectronic component. A first of the conductors contacts the first portion of the first microelectronic component and has a first inductance, and a second of the conductors contacts the second portion of the microelectronic component and has a second inductance. The second inductance is greater than the first inductance.

Abstract: The disclosures made herein relate to RF power semiconductor devices. In accordance with one embodiment of the disclosures made herein, a RF power plastic semiconductor device comprises a semiconductor (RF) device, a Low Temperature Co-Fired Ceramic (LTCC) impedance matching structure electrically connected to the RF device and a plastic package body formed over the RF device and the impedance matching structure. The LTCC impedance matching structure comprises a metallized layer overlying a major body portion of the impedance matching structure and comprises a passivation layer on the metallized layer. The passivation layer enhances bond strength of a mold compound of the plastic package body to the metallized layer. Portions of the metallized layer are exposed through the passivation layer for enabling electrical interconnects to be formed between the LTCC impedance matching structure and the RF device.

Abstract: The disclosures made herein relate to RF power semiconductor devices. In accordance with one embodiment of the disclosures made herein, a RF power plastic semiconductor device comprises a semiconductor (RF) device, a Low Temperature Co-Fired Ceramic (LTCC) impedance matching structure electrically connected to the RF device and a plastic package body formed over the RF device and the impedance matching structure. The LTCC impedance matching structure comprises a metallized layer overlying a major body portion of the impedance matching structure and comprises a passivation layer on the metallized layer. The passivation layer enhances bond strength of a mold compound of the plastic package body to the metallized layer. Portions of the metallized layer are exposed through the passivation layer for enabling electrical interconnects to be formed between the LTCC impedance matching structure and the RF device.