Patents by Inventor Pierre Muret

Pierre Muret has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a MOS stack on a diamond substrate
    Patent number: 9337034
    Abstract: The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: May 10, 2016
    Assignees: Centre National de la Recherche Scientifique, Universite Joseph Fourier
    Inventors: Gauthier Chicot, Aurélien Marechal, Pierre Muret, Julien Pernot
  • METHOD FOR PRODUCING A SCHOTTKY DIODE ON A DIAMOND SUBSTRATE
    Publication number: 20160071936
    Abstract: A method for producing a Schottky diode, including the following steps: oxygenating the surface of a semiconductive layer of monocrystalline diamond, in such a way as to replace hydrogen surface terminations of the semiconductive layer with oxygen surface terminations; and forming, by physical vapour deposition, a first conductive layer of zirconium or indium-tin oxide on the surface of the semiconductive layer.
    Type: Application
    Filed: April 18, 2014
    Publication date: March 10, 2016
    Applicants: Centre National de la Recherche Scientifique, Universite Joseph Fourier, Institut Polytechnique de Grenoble
    Inventors: David Eon, Etienne Gheeraert, Pierre Muret, Julien Pernot, Aboulaye Traore
  • METHOD FOR PRODUCING A MOS STACK ON A DIAMOND SUBSTRATE
    Publication number: 20150014707
    Abstract: The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.
    Type: Application
    Filed: December 20, 2012
    Publication date: January 15, 2015
    Applicant: Universite Joseph Fourier
    Inventors: Gauthier Chicot, Aurélien Marechal, Pierre Muret, Julien Pernot