Abstract: A nanowire structure that includes a conductive layer; conductive wires having first ends that contact the conductive layer and second ends that protrude from the conductive layer; and a lateral bridge layer that connects laterally a number of the conductive wires to provide a substantially uniform spacing between the conductive wires.

Abstract: A nanowire structure that includes a conductive layer; conductive wires having first ends that contact the conductive layer and second ends that protrude from the conductive layer; and a lateral bridge layer that connects laterally a number of the conductive wires to provide a substantially uniform spacing between the conductive wires.

Abstract: A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots.

Abstract: A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots.

Abstract: Cryostat (1) for studying samples in a vacuum, which cryostat comprises a cold finger (2) equipped with a finger portion as well as a base portion (10) rigidly connected to the finger portion, which cryostat also includes a sample support (32) mounted on a free end for cooling of the finger portion, wherein this finger portion is placed in a vacuum chamber (4). The vacuum chamber is partially defined by a one-piece hollow part (6) defining an open cavity (46) with a single opening (44) through which the finger portion passes, and the sample support is located inside said open cavity (46). The chamber is also defined by a cryostat body (8) of which an external cylindrical surface with a circular cross-section (36) cooperates with a rotation device (62).

Abstract: A method for making an electroluminescent PN junction includes molecular bonding a face in a crystalline semiconducting material doped with a first type of a first element with a face in a crystalline semiconducting material doped with a second type opposite to the first type, of a second element, at a bonding interface. The semiconducting material has an indirect forbidden band. The crystalline lattices shown by the faces are shifted in rotation by a predetermined angle so as to at least cause formation of a network of screw type dislocations at the bonding interface.