Abstract: A method for optimizing an existing generator system based on photovoltaic cells and provided with an existing photovoltaic panel or a group of existing photovoltaic panels, each panel having a first plurality of cells of a first type interconnected in series or in series/in parallel. The method includes: determining an operating voltage of the panel(s); producing additional panel module(s) having a second plurality of thin-film cells of a second type and having a different band gap width than the cells of the panel(s), the additional module(s) being configured to supply an operating voltage equal, within ±10%, to the voltage of the panel(s); positioning the additional module to overlap on or under the panel or one of the panel(s), the module being connected in parallel to the panel(s), or positioning several additional modules to overlap on or under several panels, the several modules being connected in parallel to panels.

Abstract: Fabrication of a double-sided photovoltaic cell, with two opposite active surfaces, comprising a step of depositing, on each active surface, at least one electric contact. The deposition step comprises in particular a shared operation of depositing on each of the active surfaces, implemented by electrolysis in a shared electrolysis tank comprising: a first compartment for depositing a metal layer on a first active surface of the cell, for fabrication of a contact comprising said metal layer on the first active surface; and a second compartment for depositing, by oxidation, a metal oxide conductor layer on the second active surface of the cell, for the fabrication of a contact comprising said metal oxide layer on the second active surface.

Abstract: A thin-film photovoltaic device is proposed having an optimized layout for one of the electrical contacts. The device comprises a substrate. A first thin film forming a first electrical contact of the photovoltaic device is arranged on the substrate. An absorber is arranged on the first electrical contact. A second thin film forming a second electrical contact of the photovoltaic device is arranged on the substrate. A transparent conductive layer is arranged on the absorber. In addition, the second electrical contact is spaced apart from the first electrical contact, and the transparent conductive layer is in contact with the absorber and the second electrical contact.

Abstract: Fabrication of a double-sided photovoltaic cell, with two opposite active surfaces, comprising a step of depositing, on each active surface, at least one electric contact. The deposition step comprises in particular a shared operation of depositing on each of the active surfaces, implemented by electrolysis in a shared electrolysis tank comprising: a first compartment for depositing a metal layer on a first active surface of the cell, for fabrication of a contact comprising said metal layer on the first active surface; and a second compartment for depositing, by oxidation, a metal oxide conductor layer on the second active surface of the cell, for the fabrication of a contact comprising said metal oxide layer on the second active surface.

Abstract: The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.

Abstract: The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI2-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy.

Abstract: The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.

Abstract: The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.

Abstract: The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI2-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy.

Abstract: The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Abstract: The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI<SB>Y</SB> compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

Abstract: The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Abstract: The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI<SB>Y</SB> compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

Abstract: The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.

Abstract: The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.