Patents by Inventor Pierre Poulain

Pierre Poulain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4485391
    Abstract: A phototransistor which is capable of operating alternately in the emission mode and in the reception mode can be coupled under favorable conditions to an optical fiber in a telecommunications system. An active layer constitutes the base of the transistor and forms a heterojunction with two layers of opposite conductivity type which constitute the emitter and collector of the transistor. The base contact is formed by a heavily doped region of the same conductivity type as the active layer and defines the useful zone of photon coupling between the optoelectronic component and the entrance face or exit face of the optical fiber.
    Type: Grant
    Filed: October 28, 1981
    Date of Patent: November 27, 1984
    Assignee: Thomson-CSF
    Inventors: Pierre Poulain, Baudouin de Cremoux, Pierre Hirtz
  • Patent number: 4445130
    Abstract: A phototransistor in planar technology for optical fiber communications permitting an easy formation of the contact connection of the transistor base located within the intermediate layer of an npn stack as well as accurate localization of the pn junction. To this end, the upper semiconductor layer initially receives a first diffusion of doping impurity in a first region which penetrates into the lower layer to a slight extent and forms the base region. An impurity of opposite type is then implanted in a second region which is located within the first and forms the emitter region whilst the substrate constitutes the collector. The base and emitter connections are formed on the free face whilst the collector is connected on the substrate side.
    Type: Grant
    Filed: November 9, 1981
    Date of Patent: April 24, 1984
    Assignee: Thomson-CSF
    Inventors: Pierre Poulain, Baudouin de Cremoux, Pierre Hirtz
  • Patent number: 4366334
    Abstract: The invention relates to a low cost photovoltaic cell, using a minimum thickness layer of semiconductor compounds able to provide the photovoltaic effect and specifically in polycrystalline form. On a molybdenum sheet an auxiliary polycrystalline germanium layer is deposited in order to facilitate subsequent depositions. This is followed by an intermediate polycrystalline layer of gallium aluminum arsenide and an active layer of polycrystalline gallium arsenide. The presence of the intermediate layer with a wider forbidden band than that of the active layer compensates the effect on the efficiency of the limited thickness of the active layer.
    Type: Grant
    Filed: January 29, 1981
    Date of Patent: December 28, 1982
    Assignee: Thomson-CSF
    Inventors: Baudouin de Cremoux, Pierre Poulain, Nicole Sol