Abstract: A pixel for creating an optical phase change includes a transparent electrical insulator, a first electrical conductor disposed on the transparent electrical insulator, the first electrical conductor comprising an antenna component and a connector component, an electrical insulator disposed on the first electrical conductor, a transparent semiconductor disposed on the electrical insulator, and a second electrical conductor disposed on the transparent semiconductor. The transparent semiconductor is sufficiently thick to prevent plasmonic resonance from occurring at an interface between the transparent semiconductor and the second electrical conductor.

Abstract: Apparatus and techniques are presented such as can be used for electro-optic modulation and detection or other applications. For example, an optical metal grating is disposed on a thin metal film to couple light from broadside to the metal film as surface plasmon-polariton waves; below the metal film is located a thin insulating layer and a doped semiconductor region forming a metal-insulator-semiconductor structure. The device can be configured to operate as a reflection or transmission modulator, or as a photodetector, for example. Modulating the voltage applied to the metal-insulator-semiconductor structure modulates the carrier concentration in the semiconductor near the insulating layer, which modulates the refractive index of the semiconductor in this region, thus modulating the coupling efficiency to the surface plasmon-polaritons, thus modulating the reflectance and transmittance of the device.

Abstract: Apparatus and techniques are presented such as can be used for electro-optic modulation and detection or other applications. For example, an optical metal grating is disposed on a thin metal film to couple light from broadside to the metal film as surface plasmon-polariton waves; below the metal film is located a thin insulating layer and a doped semiconductor region forming a metal-insulator-semiconductor structure. The device can be configured to operate as a reflection or transmission modulator, or as a photodetector, for example. Modulating the voltage applied to the metal-insulator-semiconductor structure modulates the carrier concentration in the semiconductor near the insulating layer, which modulates the refractive index of the semiconductor in this region, thus modulating the coupling efficiency to the surface plasmon-polaritons, thus modulating the reflectance and transmittance of the device.

Abstract: A low-loss waveguide that can be curved aggressively, that is, curved with a radius of curvature that is substantially zero, in the plane of propagation, without radiating, is formed by a slab of dielectric material having four metal plates, two on each opposite surface of the slab and mutually spaced to define in the dielectric slab between the four metal plates a confinement zone. In use, electromagnetic radiation injected in one end of the zone by suitable input means will propagate throughout the zone to an extraction means. Lower loss and better confinement of the radiation may be obtained by providing plugs of dielectric material adjacent the inwardly-facing edge of each of the metal plates. Embodiments of the invention can be used to implement integrated optical devices and circuits for routing or processing light signals.

Abstract: A low-loss waveguide that can be curved aggressively, that is, curved with a radius of curvature that is substantially zero, in the plane of propagation, without radiating, is formed by a slab of dielectric material having four metal plates, two on each opposite surface of the slab and mutually spaced to define in the dielectric slab between the four metal plates a confinement zone. In use, electromagnetic radiation injected in one end of the zone by suitable input means will propagate throughout the zone to an extraction means. Lower loss and better confinement of the radiation may be obtained by providing plugs of dielectric material adjacent the inwardly-facing edge of each of the metal plates. Embodiments of the invention can be used to implement integrated optical devices and circuits for routing or processing light signals.

Abstract: An optical device has a waveguide structure comprising a thin strip (12) having finite width and thickness of material having a relatively high free charge carrier density supported by a membrane (14) having a predetermined thickness of material that has a relatively low free charge carrier density. The dimensions of the width and thickness of the strip and the thickness of the supporting membrane are such that, when the waveguide structure is surrounded at least partially by an environment (E) having a low free charge carrier density, optical radiation having a wavelength in a predetermined range couples to the waveguide structure and propagates along the length thereof as a plasmon-polariton wave that permeates at least part of the environment (E).

Abstract: A gas sensor for hydrogen or other gases, especially flammable or explosive gases, has a plasmon-polariton waveguide comprising a metal strip on a membrane supported by a substrate in an environment in which the gas is to be introduced, and coupling means for coupling optical radiation into and out of the plasmon-polariton waveguide such that the optical radiation propagates therealong as a plasmon-polariton wave. The metal strip comprises by a chemical transducer (e.g. Pd or PdNi), the arrangement being such that exposure of the metal strip or coating to the gas to be monitored causes a change in the propagation characteristics of the plasmon-polariton wave and hence the optical radiation coupled out of the plasmon-polariton waveguide.

Abstract: An external-cavity laser, suitable for producing a coherent and highly-polarized optical emission, particularly at communication wavelengths, is enabled by a novel wavelength selective element based on a waveguide technology that supports a long-range plasmons polariton mode. These external-cavity lasers leverage the inherent properties of the novel wavelength selective elements, which are materials agnostic, providing easier means for tunability, laser stability, and low cost of fabrication, high output power and a highly polarized output. Tunable versions are also disclosed.

Abstract: A waveguide structure comprises a thin strip of material having a relatively high free charge carrier density surrounded by material having a relatively low free charge carrier density. The width and thickness of the strip are dimensioned such that optical radiation having a wavelength in a predetermined range couples to the strip and propagates along its length as a plasmon-polariton wave. The device includes a waveguide heater for passing a current through the strip to heat it and the surrounding material, so as to vary propagation of the optical radiation, or means for monitoring propagation of the optical radiation to determine a change in temperature of the strip. Some embodiments provide both heating of the strip and monitoring of its temperature.

Abstract: A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relatively low free charge carrier density, the material on at least one side of the strip comprising a semiconductor, the strip having finite width and thickness with dimensions such that optical radiation couples to the strip and propagates along the length of the strip as a plasmon-polariton wave, light for detection being coupled to one end of the strip to propagate along the strip as said plasmon-polariton wave, ohmic contact means applied to the semiconductor material and at least one electrode means connected to the strip for applying bias to the Schottky barrier and extracting a photodetector current corresponding to the light applied to the photodetector.

Abstract: A low loss, low drive voltage plasmon-polariton electro-optic modulator based on mode cutoff comprises a waveguide structure formed by a thin metallic strip surrounded by material having a relatively low free charge carrier density. The metallic strip has finite width and thickness with dimensions such that optical radiation having a wavelength in a predetermined range couples to the metallic strip and propagates along the length of the metallic strip as a plasmon-polariton wave. The surrounding material comprises two distinct portions with the metallic strip extending between them. The modulator comprises means for varying an electric field applied to at least one portion so as to vary the value of the electromagnetic property and thereby the propagation characteristics of the plasmon-polariton wave.

Abstract: A grating, suitable for filtering optical radiation, comprises a plurality of concatenated grating sections each having different physical characteristics as compared with adjacent grating sections. At least one of the sections comprises a waveguide structure formed by a thin strip (100) of a material having a relatively high free charge carrier density surrounded by material having a relatively low free charge carrier density. The strip has finite width (W) and thickness (t) with dimensions such that optical radiation having a wavelength in a predetermined range couples to the strip and propagates along the length of the strip as a plasmon-polariton wave. Various grating architectures may be implemented, e.g. chirped, interleaved, uniform, etc. A method of producing such gratings derives normalized phase constants and attenuation constants and then uses, for example, TMM or Coupled Mode Theory to derive therefrom the optical response of the grating.

Abstract: The purely bound electromagnetic modes of propagation supported by waveguide structures comprised of a thin lossy metal film of finite width embedded in an infinite homogeneous dielectric have been characterized at optical wavelengths. One of the fundamental modes supported by the structure exhibits very interesting characteristics and is potentially quite useful. It evolves with decreasing film thickness and width towards the TEM wave supported by the background (an evolution similar to that exhibited by the sb mode in symmetric metal film slab waveguides), its losses and phase constant tending asymptotically towards those of the TEM wave. Attenuation values can be well below those of the sb mode supported by the corresponding metal film slab waveguide. Low mode power attenuation in the neighborhood of 10 to 0.1 dB/cm is achievable at optical communications wavelengths, with even lower values being possible.

Abstract: A Schottky barrier photodetector comprises a waveguide structure formed by a thin strip of material having a relatively high free charge carrier density, for example a conductor or certain classes of highly-doped semiconductor, surrounded by material having a relatively low free charge carrier density, the material on at least one side of the strip comprising a semiconductor, the strip having finite width and thickness with dimensions such that optical radiation couples to the strip and propagates along the length of the strip as a plasmon-polariton wave, light for detection being coupled to one end of the strip to propagate along the strip as said plasmon-polariton wave, ohmic contact means applied to the semiconductor material and at least one electrode means connected to the strip for applying bias to the Schottky barrier and extracting a photodetector current corresponding to the light applied to the photodetector.

Abstract: An external-cavity laser, suitable for producing a coherent and highly-polarized optical emission, particularly at communication wavelengths, is enabled by a novel wavelength selective element based on a waveguide technology that supports a long-range plasmons polariton mode. These external-cavity lasers leverage the inherent properties of the novel wavelength selective elements, which are materials agnostic, providing easier means for tunability, laser stability, and low cost of fabrication, high output power and a highly polarized output. Tunable versions are also disclosed.

Abstract: An optical device comprises a waveguide structure formed by a strip (100) of a material having a relatively high free charge carrier density surrounded by a material having a relatively low free charge carrier density. The strip has finite width (W) and thickness (t) of the same order with dimensions such that optical radiation having a wavelength in a predetermined range couples to the strip and propagates along the length of the strip as a plasmon-polariton wave. Preferably the width and thickness are substantially equal and less than about 300 nm.

Abstract: A grating, suitable for filtering optical radiation, comprises a plurality of concatenated grating sections each having different physical characteristics as compared with adjacent grating sections. At least one of the sections comprises a waveguide structure formed by a thin strip (100) of a material having a relatively high free charge carrier density surrounded by material having a relatively low free charge carrier density. The strip has finite width (W) and thickness (t) with dimensions such that optical radiation having a wavelength in a predetermined range couples to the strip and propagates along the length of the strip as a plasmon-polariton wave. Various grating architectures may be implemented, e.g. chirped, interleaved, uniform, etc. A method of producing such gratings derives normalized phase constants and attenuation constants and then uses, for example, TMM or Coupled Mode Theory to derive therefrom the optical response of the grating.

Abstract: The purely bound electromagnetic modes of propagation supported by waveguide structures comprised of a thin lossy metal film of finite width embedded in an infinite homogeneous dielectric have been characterized at optical wavelengths. One of the fundamental modes supported by the structure exhibits very interesting characteristics and is potentially quite useful. It evolves with decreasing film thickness and width towards the TEM wave supported by the background (an evolution similar to that exhibited by the sb mode in symmetric metal film slab waveguides), its losses and phase constant tending asymptotically towards those of the TEM wave. Attenuation values can be well below those of the sb mode supported by the corresponding metal film slab waveguide. Low mode power attenuation in the neighbourhood of 10 to 0.1 dB/cm is achievable at optical communications wavelengths, with even lower values being possible.

Abstract: A low loss, low drive voltage plasmon-polariton electro-optic modulator based on mode cutoff comprises a waveguide structure formed by a thin metallic strip surrounded by material having a relatively low free charge carrier density. The metallic strip has finite width and thickness with dimensions such that optical radiation having a wavelength in a predetermined range couples to the metallic strip and propagates along the length of the metallic strip as a plasmon-polariton wave. The surrounding material comprises two distinct portions with the metallic strip extending between them. The modulator comprises means for varying an electric field applied to at least one portion so as to vary the value of the electromagnetic property and thereby the propagation characteristics of the plasmon-polariton wave.

Abstract: Waveguide structures comprising a thin lossy metal film of finite width embedded in an infinite homogeneous dielectric support purely bound electromagnetic modes of propagation low mode power attenuation in the neighbourhood of 10 to 0.1 dB/cm is achievable at optical communications wavelengths, with even lower values being possible. Carefully selecting the film's thickness and width can make this mode the only long-ranging one supported. In addition, the mode can have a field distribution that renders it excitable using an end-fire approach. The finite-width metal film waveguide may be used for applications requiring short propagation distances and 2-D field confinement in the transverse plane, enabling various devices to be constructed, such as couplers, splitters, modulators, interferometers, switches and periodic structures. Under certain conditions, an asymmetric structure can support a long-ranging mode having a field distribution that is suitable to excitation using an end-fire technique.