Abstract: A wafer inspection method comprises imaging a full surface of the wafer at an imaging resolution insufficient to resolve individual microstructures which are repetitively arranged on the wafer. A mask 109 is applied to the recorded image and unmasked portions 111 of the image are further processed by averaging. The unmasked portions 111 are selected such that they include memory portions of the wafer.

Abstract: A method of manufacturing a plurality of semiconductor wafers comprising micro-inspecting at least one location within at least one micro-inspected pattern field and determining at least one parameter value representing a property of the wafer at the micro-inspected location, macro-inspecting a plurality of locations within the at least one micro-inspected pattern field and determining, for each macro-inspected location of the macro-inspected pattern field, at least one parameter value representing the property of the wafer at the macro-inspected location based on the light intensity recorded for the macro-inspected location and on the at least one parameter value representing the property of the wafer at the micro-inspected location of this pattern field.

Abstract: A method of inspecting a semiconductor substrate having a back surface and including at least one piece of metal embedded in the substrate comprises directing measuring light towards the back surface of the substrate and detecting a portion of the measuring light received back from the substrate. The method also includes determining a distance between the piece of metal and the back surface based upon the detected measuring light received back from the substrate.

Abstract: A method of manufacturing a plurality of semiconductor wafers comprising micro-inspecting at least one location within at least one micro-inspected pattern field and determining at least one parameter value representing a property of the wafer at the micro-inspected location, macro-inspecting a plurality of locations within the at least one micro-inspected pattern field and determining, for each macro-inspected location of the macro-inspected pattern field, at least one parameter value representing the property of the wafer at the macro-inspected location based on the light intensity recorded for the macro-inspected location and on the at least one parameter value representing the property of the wafer at the micro-inspected location of this pattern field.

Abstract: A wafer inspection method comprises imaging a full surface of the wafer at an imaging resolution insufficient to resolve individual microstructures which are repetitively arranged on the wafer. A mask 109 is applied to the recorded image and unmasked portions 111 of the image are further processed by averaging. The unmasked portions 111 are selected such that they include memory portions of the wafer.

Abstract: A method of inspecting a semiconductor substrate having a back surface and including at least one piece of metal embedded in the substrate comprises directing measuring light towards the back surface of the substrate and detecting a portion of the measuring light received back from the substrate. The method also includes determining a distance between the piece of metal and the back surface based upon the detected measuring light received back from the substrate.

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Abstract: An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths.

Abstract: An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths.

Abstract: The invention relates to a method for noninvasively characterizing embedded micropatterns which are hidden under the surface of a wafer down to 100 ?m. The micropatterns are identified with reference micropatterns from a previously produced reference library with the aid of their specific ellipsometric parameters.

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Abstract: One embodiment of the invention provides a method for determining or inspecting a lateral dimension or a volume of a recess in a layer at a surface of a substrate or a property of a material arranged in the recess. The layer having the recess is irradiated with an electromagnetic scanning radiation having a wavelength that is greater than a lateral dimension of the recess, and an electromagnetic response radiation that emerges from an interaction of the scanning radiation with the layer having the recess is received. Characterization data, which characterize the interaction between the layer having the recess and the scanning radiation, are ascertained from the received electromagnetic response radiation, the characterization data mapping the lateral dimension or the volume of the recess or the property of the material arranged in the recess.

Abstract: The invention relates to a method for noninvasively characterizing embedded micropatterns which are hidden under the surface of a wafer down to 100 ?m. The micropatterns are identified with reference micropatterns from a previously produced reference library with the aid of their specific ellipsometric parameters.