Patents by Inventor Pierre Yves Lesaicherre

Pierre Yves Lesaicherre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5943547
    Abstract: In a capacitor including a silicon substrate and an insulating layer formed on the silicon substrate having a contact hole, a lower electrode layer including a silicon diffusion preventing conductive layer and an oxidation resistance conductive layer, an upper electrode layer, and a high dielectric constant layer therebetween, the silicon diffusion preventing layer is located on or within the contact hole and is isolated from the high dielectric constant layer. The high dielectric constant layer is formed on an upper surface and a side surface of the oxidation resistance conductive layer.
    Type: Grant
    Filed: September 9, 1997
    Date of Patent: August 24, 1999
    Assignee: NEC Corporation
    Inventors: Shintaro Yamamichi, Pierre Yves Lesaicherre
  • Patent number: 5883781
    Abstract: In a capacitor including a silicon substrate and an insulating layer formed on the silicon substrate having a contact hole, a lower electrode layer including a silicon diffusion preventing conductive layer and an oxidation resistance conductive layer, an upper electrode layer, and a high dielectric constant layer therebetween, the silicon diffusion preventing layer is located on or within the contact hole and is isolated from the high dielectric constant layer. The high dielectric constant layer is formed on an upper surface and a side surface of the oxidation resistance conductive layer.
    Type: Grant
    Filed: April 18, 1996
    Date of Patent: March 16, 1999
    Assignee: NEC Corporation
    Inventors: Shintaro Yamamichi, Pierre Yves Lesaicherre