Patents by Inventor Pierrette Rivallin

Pierrette Rivallin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanowire semiconductor device partially surrounded by a gate
    Patent number: 9728405
    Abstract: A semiconductor device is provided, including two semiconductor nanowires superimposed one on top of the other or arranged next to one another, spaced one from the other and forming channel regions of the semiconductor device, a dielectric structure entirely filling a space between the nanowires and which is in contact with the nanowires, a gate dielectric and a gate covering a first of the nanowires, sidewalls of the nanowires and sidewalls of the dielectric structure when the nanowires are superimposed one on top of the other, or covering a part of the upper faces of the nanowires and a part of an upper face of the dielectric structure when the nanowires are arranged next to one another, and wherein the dielectric structure comprises a portion of dielectric material with a relative permittivity greater than or equal to 20.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: August 8, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Sylvain Barraud, Pierrette Rivallin, Pascal Scheiblin
  • NANOWIRE SEMICONDUCTOR DEVICE PARTIALLY SURROUNDED BY A GRATING
    Publication number: 20150194489
    Abstract: A semiconductor device is provided, including two semiconductor nanowires superimposed one on top of the other or arranged next to one another, spaced one from the other and forming channel regions of the semiconductor device, a dielectric structure entirely filling a space between the nanowires and which is in contact with the nanowires, a gate dielectric and a gate covering a first of the nanowires, sidewalls of the nanowires and sidewalls of the dielectric structure when the nanowires are superimposed one on top of the other, or covering a part of the upper faces of the nanowires and a part of an upper face of the dielectric structure when the nanowires are arranged next to one another, and wherein the dielectric structure comprises a portion of dielectric material with a relative permittivity greater than or equal to 20.
    Type: Application
    Filed: December 23, 2014
    Publication date: July 9, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Sylvain BARRAUD, Pierrette Rivallin, Pascal Scheiblin