Abstract: An integrated device comprises an electrically conductive substrate having an upper surface comprising a recess and a lower surface for contacting the device, a multi-layer stack provided on the upper surface of the substrate and lining the recess, and an electrically conductive layer for contacting the device provided on the multi-layer stack. The multi-layer stack comprises a first, a second, a third and a fourth dielectric layer. Immediately adjacent dielectric layers have different bandgaps to trap charge carriers at respective interfaces between the dielectric layers during operation of the device.

Abstract: A unit trench capacitor in a substrate includes one or more trenches in the substrate, a dielectric layer, a first electrode and a second electrode. Walls of the one or more trenches are covered by the dielectric layer which separates the first electrode from the second electrode. Each trench follows a closed curve. The closed curve of each trench has one or more elongated parts in directions in which the substrate has a maximum elastic modulus, or the closed curve of each trench has a circular shape if the substrate has an isotropic elastic modulus.

Abstract: A semiconductor device including a first transistor in a substrate, a second transistor in the substrate, and a further device in the substrate. The second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage. The first voltage is the (normal) voltage of operation of the first transistor, and the first transistor is isolated from the second voltage.

Abstract: An optical data transceiver is manufactured by forming an integrated control circuit (101) on a suitable substrate, such as a silicon wafer, and then mounting said integrated circuit (101) onto the lead frame (102). Electrical connections may then be made between said integrated circuit (101) and said lead frame (102). The combined assembly comprising the integrated circuit (101) and lead frame (102) is then inserted into the cavity of a mold tool (not shown). A suitable molding compound is injected to encapsulate the combined assembly. The mold tool is provided with a projection (not shown) that is in contact with a portion of the surface of the integrated circuit (101) when the assembly is in the mold tool. As a result, the opening (106), exposing that portion of the surface of the integrated control circuit (101) that was in contact with the projection of the mold tool, is provided.

Abstract: A semiconductor device comprises: a first transistor in a substrate; a second transistor in said substrate; and a further device in said substrate, wherein the second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage, wherein the first voltage is the (normal) voltage of operation of the first transistor, and wherein the first transistor is isolated from the second voltage.

Abstract: An optical data transceiver is manufactured by forming an integrated control circuit (101) on a suitable substrate, such as a silicon wafer, and then mounting said integrated circuit (101) onto the lead frame (102). Electrical connections may then be made between said integrated circuit (101) and said lead frame (102). The combined assembly comprising the integrated circuit (101) and lead frame (102) is then inserted into the cavity of a mould tool (not shown). A suitable moulding compound is injected to encapsulate the combined assembly. The mould tool is provided with a projection (not shown) that is in contact with a portion of the surface of the integrated circuit (101) when the assembly is in the mould tool. As a result, the opening (106), exposing that portion of the surface of the integrated control circuit (101) that was in contact with the projection of the mould tool, is provided.

Abstract: An optical data transceiver (100) comprises an integrated circuit (101), having provided on one side thereof a light sensing emitting means (104). A reflecting and receiving means (102), is mounted on the same surface of integrated circuit (101) as the light sensing or emitting means (104). The reflector means is open at both ends and has shaped and reflective internal surfaces (103). The reflecting and receiving means (102) is adapted at one end to receive a Plastic Optical Fibre (POF) (150) into connection therewith and at the other end is aligned with the light sensing or emitting means (104). In this way, the reflecting and receiving means is operable to direct light proceeding from the end of the fibre (150) to the light sensing means (104),or direct light from the light emitting means (104) to the end of the fibre (150), and is further operable to retain the POF (150) in position relative to the light sensing or emitting means (104).

Abstract: The present invention is related to a method for testing a micro-electronic device, by applying a plurality of test vectors to said device, and measuring for each test vector, the quiescent supply current IDDQ, to said device, wherein each IDDQ measured value is divided by another IDDQ value, and wherein the result of said division is compared to a predefined reference, resulting in a pass or fail decision for said device.

Abstract: The present invention is related to a method for testing a micro-electronic device, by applying a plurality of test vectors to said device, and measuring for each test vector, the quiescent supply current IDDQ, to said device, wherein each IDDQ measured value is divided by another IDDQ value, and wherein the result of said division is compared to a predefined reference, resulting in a pass or fail decision for said device.

Abstract: A semiconductor photodiode, method for optimizing its design, and method for generating a fast signal current in response to incident electromagnetic radiation. A component of the signal current associated with fast photo-generated electron-hole pairs (i.e., photocarriers) is included in the fast signal current, whereas a component of the signal current associated with the slow photocarriers is excluded. The invention is capable of data rates greater than 1 Gbit/s, is compatible with standard integrated circuit technology and processing techniques, and avoids the performance problems associated with a low data rate.