Patents by Inventor Pieter Ids KUINDERSMA

Pieter Ids KUINDERSMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photonic integrated circuit having improved electrical isolation between n-type contacts
    Patent number: 11585979
    Abstract: A photonic integrated circuit including first and second opto-electronic devices that are fabricated on a semiconductor wafer having an epitaxial layer stack including an n-type indium phosphide-based contact layer that is provided with at least one selectively p-type doped tubular-shaped region for providing an electrical barrier between respective n-type contact regions of the first and second opto-electronic devices that are optically interconnected by a passive optical waveguide that is fabricated in a non-intentionally doped waveguide layer including indium gallium arsenide phosphide, the non-intentionally doped waveguide layer being arranged on top of the n-type contact layer, wherein a first portion of the at least one selectively p-type doped tubular-shaped region is arranged underneath the passive optical waveguide between the first and second opto-electronic devices. An opto-electronic system including the photonic integrated circuit.
    Type: Grant
    Filed: January 7, 2020
    Date of Patent: February 21, 2023
    Assignee: EFFECT PHOTONICS B.V.
    Inventors: Pieter Ids Kuindersma, Boudewijn Docter
  • PHOTONIC INTEGRATED CIRCUIT HAVING IMPROVED ELECTRICAL ISOLATION BETWEEN N-TYPE CONTACTS
    Publication number: 20200264366
    Abstract: A photonic integrated circuit including first and second opto-electronic devices that are fabricated on a semiconductor wafer having an epitaxial layer stack including an n-type indium phosphide-based contact layer that is provided with at least one selectively p-type doped tubular-shaped region for providing an electrical barrier between respective n-type contact regions of the first and second opto-electronic devices that are optically interconnected by a passive optical waveguide that is fabricated in a non-intentionally doped waveguide layer including indium gallium arsenide phosphide, the non-intentionally doped waveguide layer being arranged on top of the n-type contact layer, wherein a first portion of the at least one selectively p-type doped tubular-shaped region is arranged underneath the passive optical waveguide between the first and second opto-electronic devices. An opto-electronic system including the photonic integrated circuit.
    Type: Application
    Filed: January 7, 2020
    Publication date: August 20, 2020
    Inventors: Pieter Ids KUINDERSMA, Boudewijn DOCTER