Abstract: A method of calibrating analog-to-digital converters, ADCs, of a charged particle-optical device comprises: providing, for each of the ADCs, image data of charged particles detected from a sample output by the ADC; calculating, for each of the ADCs, at least one statistical value from a distribution of the image data output by the ADC; and changing at least one setting of at least one of the ADCs based on the calculated at least one statistical values so as to compensate for any mismatch between the at least one statistical value of the ADCs.

Abstract: Disclosed herein is an multi-array lens configured in use to focus a plurality of beamlets of charged particles along a multi-beam path, wherein each lens in the array comprises: an entrance electrode; a focussing electrode and a support. The focusing electrode is down beam of the entrance electrode along a beamlet path and is configured to be at a potential different from the entrance electrode. The support is configured to support the focusing electrode relative to the entrance electrode. The focusing electrode and support are configured so that in operation the lens generates a rotationally symmetrical field around the beamlet path.

Abstract: Disclosed herein is an multi-array lens configured in use to focus a plurality of beamlets of charged particles along a multi-beam path, wherein each lens in the array comprises: an entrance electrode; a focusing electrode and a support. The focusing electrode is down beam of the entrance electrode along a beamlet path and is configured to be at a potential different from the entrance electrode. The support is configured to support the focusing electrode relative to the entrance electrode. The focusing electrode and support are configured so that in operation the lens generates a rotationally symmetrical field around the beamlet path.

Abstract: Disclosed herein is a manipulator or an array of manipulator. A manipulator manipulates a charged particle beam in a projection system. The manipulator comprising a substrate with major surfaces and a through-passage between associated apertures in the major surfaces. The through passage configured for passage of a path of a charged particle beam. An inner wall of the through-passage between the major surfaces comprises a plurality of electrodes configured to manipulate the charged particle beam. Each electrode comprises doped substrate. The through-passage comprises recesses that extend away from the path of the charged particle beam. Each recess defines a gap between the adjacent electrodes and further comprising an electrically insulating region between the adjacent electrodes. The recesses extend behind at least one of the adjacent electrodes relative to the path of the charged particle beam and comprising at least part of the electrically insulating region.

Abstract: A multi-beam manipulator device operates on sub-beams of a multi-beam to deflect the sub-beam paths. The device include: an electrode as pairs of parallel surfaces. Each pair of parallel surfaces includes a first surface that is arranged along a side of a corresponding line of sub-beam paths and a second surface that is arranged parallel to the first surface and along an opposite side of the corresponding line of sub-beam paths. A first pair of parallel surfaces is configured to electrostatically interact with an entire line of sub-beams in the multi-beam so that it is capable of applying a deflection amount to the paths of sub-beams in a first direction. A second pair of parallel surfaces is configured to electro-statically interact with an entire line of sub-beams in the multi-beam so that it is capable of applying another deflection amount to the paths of sub-beams in a second direction.

Abstract: Disclosed herein is an multi-array lens configured in use to focus a plurality of beamlets of charged particles along a multi-beam path, wherein each lens in the array comprises: an entrance electrode; a focusing electrode and a support. The focusing electrode is down beam of the entrance electrode along a beamlet path and is configured to be at a potential different from the entrance electrode. The support is configured to support the focusing electrode relative to the entrance electrode. The focusing electrode and support are configured so that in operation the lens generates a rotationally symmetrical field around the beamlet path.

Abstract: A method for preparing a semiconductor target (10), the method comprising providing a semiconductor substrate (12) including a main substrate surface (14) which defines a substrate periphery (20) along an outer edge. The semiconductor substrate (12) further has an structure layer (30) arranged on the main substrate surface, and comprising a structure layer periphery (32) that is located inwards with respect to the substrate periphery, so as to leave exposed a peripheral substrate region (22) along the substrate periphery. The method further comprises applying an electrically conductive layer (38) on the structure layer, wherein the electrically conductive layer extends beyond the structure layer periphery to establish electrical contact in a contacting portion (23) of the peripheral substrate region.