Abstract: A wafer metrology system including a dynamic sampling scheme configured to optimize a sampling rate for measurement of process wafers in an IC fabrication flow based on process capability index data as well as measurement history data. For a stable process, the process wafers may be sampled at a lower rate without negatively affecting quality control.

Abstract: A system for controlling an epitaxial growth process in an epitaxial reactor. The system includes a processor for setting up a modeled output parameter value as a linear function of the actual output parameter value and a second set of thermocouple offset parameter values. The processor also determines a distance between a target output parameter value and the modeled output parameter value.

Abstract: A method of controlling an epitaxial growth process in an epitaxial reactor. The method includes optimizing the thermocouple offset parameter for a second run by setting up a modeled output parameter value as a linear function of the actual output parameter value, and a second thermocouple offset parameter value.

Abstract: A system for controlling an epitaxial growth process in an epitaxial reactor. The system includes a processor for setting up a modeled output parameter value as a linear function of the actual output parameter value and a second set of thermocouple offset parameter values.

Abstract: A method of controlling an epitaxial growth process in an epitaxial reactor and a system for controlling an epitaxial growth process in an epitaxial reactor.

Abstract: The present invention relates to a method of forming an interfacial oxide in a bipolar transistor. The method comprises the step of rinsing a wafer having an exposed base region with ozonated deionized water, thereby forming an interfacial oxide layer over the exposed base region.

Abstract: A method of fabricating an integrated circuit insulator stack, such as an emitter window dielectric, is disclosed. A single vacuum sequence (50) is performed in a low pressure chemical vapor deposition (LPCVD) process chamber. In one disclosed example, a layer of silicon dioxide (20) is first deposited by the chemical vapor deposition (44) of bistertiarybutylaminosilane (BTBAS) in the presence of oxygen; before removing the wafer from the process chamber, a layer of silicon nitride (22) is then deposited by the chemical vapor deposition (48) of BTBAS in ammonia. The CVD processes (44, 48) are performed at low pressures, such as 500 mTorr or less, and at low temperatures, such as below 650° C.