Patents by Inventor Pijush Battacharya

Pijush Battacharya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Giant remnant polarization in laser ablated SrBiNbOthin films on Pt/TiO/SiO/Si substrates
    Patent number: 7157144
    Abstract: SrBi2Nb2O9 (SBN) thin films are deposited on Pt/TiO2/SiO2/Si substrates using off-axis pulsed laser deposition technique. Off-axis laser ablation avoids plasma damaging of the surface of SBN thin films and is favorable to grow films along the polarization axis (a–b plane). SBN thin films are grown at 350° C. substrate temperature, with 5 mm away from the plasma focus, and annealed at 750° C. for 1 hour in oxygen ambient. These SBN thin films exhibited giant remnant polarization (Pr) of 50 ?C/cm2 with coercive field of 190 kV/cm. The fatigue endurance of these SBN thin films was measured at 400 kV/cm and showed minimal (<20%) polarization degradation of up to 1010 switching cycles. The leakage current density of SBN thin films was found to be about 2×107 up to an applied field of 100 kV/cm. The above-mentioned properties of off-axis deposited SBN thin films, makes it a good material for NVRAM devices.
    Type: Grant
    Filed: November 30, 2004
    Date of Patent: January 2, 2007
    Assignee: University of Puerto Rico
    Inventors: Ram S. Katiyar, Pijush Battacharya, Rasmi R. Das