Patents by Inventor Pikhay Evgeny
Pikhay Evgeny has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230332947Abstract: A UVC disinfection system that may include a UVC radiation illumination unit, a control unit, and a node. The node may include (i) a power supply, (ii) a UVC dose sensing unit that comprises a UVC sensing element, wherein the UVC dose sensing unit is configured to sense that the UVC radiation dose received by the node reached a predefined UVC radiation dose; and (iii) a node transmitter that is configured transmit a node unique signal following a sensing, by the UVC dose sensing unit, that the UVC radiation dose received by the node reached a predefined UVC radiation dose. The control unit is configured to control an emission of UVC radiation from the UVC radiation illumination unit based on a reception or a lack of reception of the node unique signal.Type: ApplicationFiled: April 13, 2022Publication date: October 19, 2023Applicant: Tower Semiconductor Ltd.Inventors: Yakov Roizin, Pikhay Evgeny, Michael Yampolsky
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Patent number: 11698299Abstract: A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.Type: GrantFiled: August 5, 2021Date of Patent: July 11, 2023Assignee: TOWER SEMICONDUCTOR LTD.Inventors: Pikhay Evgeny, Yakov Roizin, Michael Yampolsky
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Publication number: 20230022648Abstract: A biosensor that includes a semiconductor active region; a sensing region configured to contact a fluid; and multiple electrodes that comprise decoupling electrodes and additional electrodes. The decoupling electrodes may be configured, wherein operating in a first mode, to prevent a formation of a top conductive channel within the semiconductor active region; and wherein the additional electrodes are configured, wherein operating in the first mode, to independently control (i) one or more properties of one or more other conductive channels formed within the semiconductor active region, and (ii) a Debye length at an interface between the sensing region and the fluid.Type: ApplicationFiled: July 14, 2021Publication date: January 26, 2023Applicants: Tower Semiconductor Ltd., B.G. Negev Technologies and Applications Ltd., at Ben-Gurion UniversityInventors: Gil Shalev, Yakov Roizin, Pikhay Evgeny, Ie Mei Bhattacharyya, Izhar Ron, Doron Greental
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Patent number: 11543290Abstract: An ultraviolet sensor that may include a group of serially connected photovoltaic diodes of alternating polarities; a selective blocking portion that is configured to prevent ultraviolet radiation from reaching photovoltaic diodes that belong to the group and are of a first polarity, while allowing the ultraviolet radiation to reach photovoltaic diodes that belong to the group and are of a second polarity; and an interface for providing an output signal of the group, the output signal is indicative of ultraviolet radiation sensed by the photovoltaic diodes that belong to the group and are of the second polarity.Type: GrantFiled: July 14, 2020Date of Patent: January 3, 2023Assignee: TOWER SEMICONDUCTOR LTD.Inventors: Yakov Roizin, Pikhay Evgeny
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Publication number: 20220026266Abstract: A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.Type: ApplicationFiled: August 5, 2021Publication date: January 27, 2022Applicant: Tower Semiconductor Ltd.Inventors: Pikhay Evgeny, Yakov Roizin, Michael Yampolsky
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Patent number: 11231510Abstract: A radiation sensor that may include a first transistor, a first isolated conductive structure that comprises a floating gate of the first transistor, a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal, a second transistor, a second isolated conductive structure that comprises a floating gate of the second transistor, and a second group of radiation sensing diodes that are coupled to each other, wherein the second group is configured to convert sensed radiation that is sensed by the second group to a second output signal, and to change a state, under a control of the first transistor, of the second isolated conductive structure using the second output signal.Type: GrantFiled: September 4, 2020Date of Patent: January 25, 2022Assignee: Tower Semiconductor Ltd.Inventors: Yakov Roizin, Pikhay Evgeny
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Publication number: 20220018977Abstract: A radiation sensor that may include a first transistor, a first isolated conductive structure that comprises a floating gate of the first transistor, a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal, a second transistor, a second isolated conductive structure that comprises a floating gate of the second transistor, and a second group of radiation sensing diodes that are coupled to each other, wherein the second group is configured to convert sensed radiation that is sensed by the second group to a second output signal, and to change a state, under a control of the first transistor, of the second isolated conductive structure using the second output signal.Type: ApplicationFiled: September 4, 2020Publication date: January 20, 2022Applicant: Tower Semiconductor Ltd.Inventors: Yakov Roizin, Pikhay Evgeny
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Publication number: 20220018708Abstract: An ultraviolet sensor that may include a group of serially connected photovoltaic diodes of alternating polarities; a selective blocking portion that is configured to prevent ultraviolet radiation from reaching photovoltaic diodes that belong to the group and are of a first polarity, while allowing the ultraviolet radiation to reach photovoltaic diodes that belong to the group and are of a second polarity; and an interface for providing an output signal of the group, the output signal is indicative of ultraviolet radiation sensed by the photovoltaic diodes that belong to the group and are of the second polarity.Type: ApplicationFiled: July 14, 2020Publication date: January 20, 2022Applicant: Tower Semiconductors Ltd.Inventors: Yakov ROIZIN, Pikhay Evgeny